Time-Resolved Terahertz Spectroscopy of Free Carrier Nonlinear Dynamics in Semiconductors
Nonlinear dynamics of free carriers in direct bandgap semiconductors at terahertz (THz) frequencies is studied using the intense few-cycle source available at the Advanced Laser Light Source (ALLS). Techniques such as Z-scan and optical-pump/THz-probe are employed to explore nonlinear interactions i...
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doaj-c0f0f7fb2fe8414fbdd7d59f7e64142b2021-03-29T17:11:45ZengIEEEIEEE Photonics Journal1943-06552010-01-012457859210.1109/JPHOT.2010.20508735467198Time-Resolved Terahertz Spectroscopy of Free Carrier Nonlinear Dynamics in SemiconductorsG. Sharma0L. Razzari1F. H. Su2F. Blanchard3A. Ayesheshim4T. L. Cocker5L. V. Titova6H. C. Bandulet7T. Ozaki8J.-C. Kieffer9R. Morandotti10M. Reid11F. A. Hegmann12$^{1}$INRS-EMT, Advanced Laser Light Source, Université du Québec, Varennes, Canada$^{2}$Dipartimento di Elettronica, Università di Pavia, Pavia, Italy$^{3}$Department of Physics, University of Alberta, Edmonton, Canada$^{4}$Graduate School of Science, Kyoto University, Kyoto, JapanDept. of Phys., Univ. of Alberta, Edmonton, AB, CanadaDept. of Phys., Univ. of Alberta, Edmonton, AB, CanadaDept. of Phys., Univ. of Alberta, Edmonton, AB, CanadaAdv. Laser Light Source, Univ. du Quebec, Varennes, QC, CanadaAdv. Laser Light Source, Univ. du Quebec, Varennes, QC, CanadaAdv. Laser Light Source, Univ. du Quebec, Varennes, QC, CanadaAdv. Laser Light Source, Univ. du Quebec, Varennes, QC, Canada$^{5}$Department of Physics, University of Northern British Columbia, Prince George, CanadaDept. of Phys., Univ. of Alberta, Edmonton, AB, CanadaNonlinear dynamics of free carriers in direct bandgap semiconductors at terahertz (THz) frequencies is studied using the intense few-cycle source available at the Advanced Laser Light Source (ALLS). Techniques such as Z-scan and optical-pump/THz-probe are employed to explore nonlinear interactions in an n-doped InGaAs thin film and a photoexcited GaAs sample, respectively. The physical mechanism that gives rise to such interactions is found to be intervalley scattering. A simple Drude-based mathematical model that incorporates the intervalley scattering process is developed and agrees well with the THz response of free carriers in semiconductors.https://ieeexplore.ieee.org/document/5467198/Intervalley scatteringsemiconductorsterahertz pulsestime-resolved terahertz spectroscopyultrafast nonlinear opticsz-scan |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
G. Sharma L. Razzari F. H. Su F. Blanchard A. Ayesheshim T. L. Cocker L. V. Titova H. C. Bandulet T. Ozaki J.-C. Kieffer R. Morandotti M. Reid F. A. Hegmann |
spellingShingle |
G. Sharma L. Razzari F. H. Su F. Blanchard A. Ayesheshim T. L. Cocker L. V. Titova H. C. Bandulet T. Ozaki J.-C. Kieffer R. Morandotti M. Reid F. A. Hegmann Time-Resolved Terahertz Spectroscopy of Free Carrier Nonlinear Dynamics in Semiconductors IEEE Photonics Journal Intervalley scattering semiconductors terahertz pulses time-resolved terahertz spectroscopy ultrafast nonlinear optics z-scan |
author_facet |
G. Sharma L. Razzari F. H. Su F. Blanchard A. Ayesheshim T. L. Cocker L. V. Titova H. C. Bandulet T. Ozaki J.-C. Kieffer R. Morandotti M. Reid F. A. Hegmann |
author_sort |
G. Sharma |
title |
Time-Resolved Terahertz Spectroscopy of Free Carrier Nonlinear Dynamics in Semiconductors |
title_short |
Time-Resolved Terahertz Spectroscopy of Free Carrier Nonlinear Dynamics in Semiconductors |
title_full |
Time-Resolved Terahertz Spectroscopy of Free Carrier Nonlinear Dynamics in Semiconductors |
title_fullStr |
Time-Resolved Terahertz Spectroscopy of Free Carrier Nonlinear Dynamics in Semiconductors |
title_full_unstemmed |
Time-Resolved Terahertz Spectroscopy of Free Carrier Nonlinear Dynamics in Semiconductors |
title_sort |
time-resolved terahertz spectroscopy of free carrier nonlinear dynamics in semiconductors |
publisher |
IEEE |
series |
IEEE Photonics Journal |
issn |
1943-0655 |
publishDate |
2010-01-01 |
description |
Nonlinear dynamics of free carriers in direct bandgap semiconductors at terahertz (THz) frequencies is studied using the intense few-cycle source available at the Advanced Laser Light Source (ALLS). Techniques such as Z-scan and optical-pump/THz-probe are employed to explore nonlinear interactions in an n-doped InGaAs thin film and a photoexcited GaAs sample, respectively. The physical mechanism that gives rise to such interactions is found to be intervalley scattering. A simple Drude-based mathematical model that incorporates the intervalley scattering process is developed and agrees well with the THz response of free carriers in semiconductors. |
topic |
Intervalley scattering semiconductors terahertz pulses time-resolved terahertz spectroscopy ultrafast nonlinear optics z-scan |
url |
https://ieeexplore.ieee.org/document/5467198/ |
work_keys_str_mv |
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1724198228569620480 |