Repression of Interlayer Recombination by Graphene Generates a Sensitive Nanostructured 2D vdW Heterostructure Based Photodetector
Abstract Great success in 2D van der Waals (vdW) heterostructures based photodetectors is obtained owing to the unique electronic and optoelectronic properties of 2D materials. Performance of photodetectors based 2D vdW heterojunctions at atomic scale is more sensitive to the nanointerface of the he...
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| Format: | Article |
| Language: | English |
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Wiley
2021-08-01
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| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.202100503 |
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doaj-c102ada0aa744b7cb9fa0ccd6d170509 |
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| record_format |
Article |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Huide Wang Shan Gao Feng Zhang Fanxu Meng Zhinan Guo Rui Cao Yonghong Zeng Jinlai Zhao Si Chen Haiguo Hu Yu‐Jia Zeng Sung Jin Kim Dianyuan Fan Han Zhang Paras N. Prasad |
| spellingShingle |
Huide Wang Shan Gao Feng Zhang Fanxu Meng Zhinan Guo Rui Cao Yonghong Zeng Jinlai Zhao Si Chen Haiguo Hu Yu‐Jia Zeng Sung Jin Kim Dianyuan Fan Han Zhang Paras N. Prasad Repression of Interlayer Recombination by Graphene Generates a Sensitive Nanostructured 2D vdW Heterostructure Based Photodetector Advanced Science black phosphorus graphene interlayer recombination sensitive photodetectors vdW heterostructures |
| author_facet |
Huide Wang Shan Gao Feng Zhang Fanxu Meng Zhinan Guo Rui Cao Yonghong Zeng Jinlai Zhao Si Chen Haiguo Hu Yu‐Jia Zeng Sung Jin Kim Dianyuan Fan Han Zhang Paras N. Prasad |
| author_sort |
Huide Wang |
| title |
Repression of Interlayer Recombination by Graphene Generates a Sensitive Nanostructured 2D vdW Heterostructure Based Photodetector |
| title_short |
Repression of Interlayer Recombination by Graphene Generates a Sensitive Nanostructured 2D vdW Heterostructure Based Photodetector |
| title_full |
Repression of Interlayer Recombination by Graphene Generates a Sensitive Nanostructured 2D vdW Heterostructure Based Photodetector |
| title_fullStr |
Repression of Interlayer Recombination by Graphene Generates a Sensitive Nanostructured 2D vdW Heterostructure Based Photodetector |
| title_full_unstemmed |
Repression of Interlayer Recombination by Graphene Generates a Sensitive Nanostructured 2D vdW Heterostructure Based Photodetector |
| title_sort |
repression of interlayer recombination by graphene generates a sensitive nanostructured 2d vdw heterostructure based photodetector |
| publisher |
Wiley |
| series |
Advanced Science |
| issn |
2198-3844 |
| publishDate |
2021-08-01 |
| description |
Abstract Great success in 2D van der Waals (vdW) heterostructures based photodetectors is obtained owing to the unique electronic and optoelectronic properties of 2D materials. Performance of photodetectors based 2D vdW heterojunctions at atomic scale is more sensitive to the nanointerface of the heterojunction than conventional bulk heterojunction. Here, a nanoengineered heterostructure for the first‐time demonstration of a nanointerface using an inserted graphene layer between black phosphorus (BP) and InSe which inhibits interlayer recombination and greatly improves photodetection performances is presented. In addition, a transition of the transport characteristics of the device is induced by graphene, from diffusion motion of minority carriers to drift motion of majority carriers. These two reasons together with an internal photoemission effect make the BP/G/InSe‐based photodetector have ultrahigh specific detectivity at room temperature. The results demonstrate that high‐performance vdW heterostructure photodetectors can be achieved through simple structural manipulation of the heterojunction interface on nanoscale. |
| topic |
black phosphorus graphene interlayer recombination sensitive photodetectors vdW heterostructures |
| url |
https://doi.org/10.1002/advs.202100503 |
| work_keys_str_mv |
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doaj-c102ada0aa744b7cb9fa0ccd6d1705092021-08-04T14:01:40ZengWileyAdvanced Science2198-38442021-08-01815n/an/a10.1002/advs.202100503Repression of Interlayer Recombination by Graphene Generates a Sensitive Nanostructured 2D vdW Heterostructure Based PhotodetectorHuide Wang0Shan Gao1Feng Zhang2Fanxu Meng3Zhinan Guo4Rui Cao5Yonghong Zeng6Jinlai Zhao7Si Chen8Haiguo Hu9Yu‐Jia Zeng10Sung Jin Kim11Dianyuan Fan12Han Zhang13Paras N. Prasad14Institute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic Engineering Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ) Shenzhen University Shenzhen 518060 ChinaInstitute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic Engineering Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ) Shenzhen University Shenzhen 518060 ChinaInstitute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic Engineering Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ) Shenzhen University Shenzhen 518060 ChinaInstitute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic Engineering Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ) Shenzhen University Shenzhen 518060 ChinaInstitute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic Engineering Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ) Shenzhen University Shenzhen 518060 ChinaInstitute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic Engineering Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ) Shenzhen University Shenzhen 518060 ChinaInstitute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic Engineering Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ) Shenzhen University Shenzhen 518060 ChinaInstitute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic Engineering Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ) Shenzhen University Shenzhen 518060 ChinaInstitute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic Engineering Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ) Shenzhen University Shenzhen 518060 ChinaInstitute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic Engineering Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ) Shenzhen University Shenzhen 518060 ChinaInstitute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic Engineering Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ) Shenzhen University Shenzhen 518060 ChinaDepartment of Electrical and Computer Engineering University of Miami Coral Gables FL 33146 USAInstitute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic Engineering Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ) Shenzhen University Shenzhen 518060 ChinaInstitute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic Engineering Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ) Shenzhen University Shenzhen 518060 ChinaInstitute for Lasers, Photonics, and Biophotonics and Department of Chemistry University at Buffalo The State University of New York Buffalo NY 14260 USAAbstract Great success in 2D van der Waals (vdW) heterostructures based photodetectors is obtained owing to the unique electronic and optoelectronic properties of 2D materials. Performance of photodetectors based 2D vdW heterojunctions at atomic scale is more sensitive to the nanointerface of the heterojunction than conventional bulk heterojunction. Here, a nanoengineered heterostructure for the first‐time demonstration of a nanointerface using an inserted graphene layer between black phosphorus (BP) and InSe which inhibits interlayer recombination and greatly improves photodetection performances is presented. In addition, a transition of the transport characteristics of the device is induced by graphene, from diffusion motion of minority carriers to drift motion of majority carriers. These two reasons together with an internal photoemission effect make the BP/G/InSe‐based photodetector have ultrahigh specific detectivity at room temperature. The results demonstrate that high‐performance vdW heterostructure photodetectors can be achieved through simple structural manipulation of the heterojunction interface on nanoscale.https://doi.org/10.1002/advs.202100503black phosphorusgrapheneinterlayer recombinationsensitive photodetectorsvdW heterostructures |