Characterization of Layer Number of Two-Dimensional Transition Metal Diselenide Semiconducting Devices Using Si-Peak Analysis
Atomically thin materials such as semiconducting transition metal diselenide materials, like molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2), have received intensive interests in recent years due to their unique electronic structure, bandgap engineering, ambipolar behavior, and optical...
Main Author: | Xian Zhang |
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Format: | Article |
Language: | English |
Published: |
Hindawi Limited
2019-01-01
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Series: | Advances in Materials Science and Engineering |
Online Access: | http://dx.doi.org/10.1155/2019/7865698 |
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