Robust formation of amorphous Sb2S3 on functionalized graphene for high-performance optoelectronic devices in the cyan-gap
Abstract Despite significant progress in the fabrication and application of semiconductor materials for optical emitters and sensors, few materials can cover the cyan-gap between 450 and 500 nm. We here introduce a robust and facile method to deposit amorphous Sb2S3 films with a bandgap of 2.8 eV. B...
Main Authors: | Ju-Hung Chen, Sheng-Kuei Chiu, Jin-De Luo, Shu-Yu Huang, Hsiang-An Ting, Mario Hofmann, Ya-Ping Hsieh, Chu-Chi Ting |
---|---|
Format: | Article |
Language: | English |
Published: |
Nature Publishing Group
2020-09-01
|
Series: | Scientific Reports |
Online Access: | https://doi.org/10.1038/s41598-020-70879-1 |
Similar Items
-
Role of visual and olfactory cues in sex recognition in butterfly Cethosia cyane cyane
by: Chengzhe Li, et al.
Published: (2017-07-01) -
Optoelectronic Properties of Alumina oxide -Graphene and Titanium dioxide- amorphous Graphene Composite Material and Device
by: CAI, BING-YI, et al.
Published: (2017) -
Graphene-Based Contacts for Optoelectronic Devices
by: Susana Fernández, et al.
Published: (2020-10-01) -
Graphene plasmonic devices for terahertz optoelectronics
by: Li Yuyu, et al.
Published: (2020-05-01) -
GaInAsSbP alloys for mid-infrared optoelectronic devices
by: Cheetham, Kieran James
Published: (2011)