Sub-thermionic, ultra-high-gain organic transistors and circuits

Exploiting negative capacitance effects in organic thin-film transistors (OTFTs) is advantageous for enhancing device performance. Here, the authors report solution-processed sub-thermionic OTFTs and circuits with ferroelectric hafnium oxides that show ultra-low power and ultra-high gain.

Bibliographic Details
Main Authors: Zhongzhong Luo, Boyu Peng, Junpeng Zeng, Zhihao Yu, Ying Zhao, Jun Xie, Rongfang Lan, Zhong Ma, Lijia Pan, Ke Cao, Yang Lu, Daowei He, Hongkai Ning, Wanqing Meng, Yang Yang, Xiaoqing Chen, Weisheng Li, Jiawei Wang, Danfeng Pan, Xuecou Tu, Wenxing Huo, Xian Huang, Dongquan Shi, Ling Li, Ming Liu, Yi Shi, Xue Feng, Paddy K. L. Chan, Xinran Wang
Format: Article
Language:English
Published: Nature Publishing Group 2021-03-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-021-22192-2
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author Zhongzhong Luo
Boyu Peng
Junpeng Zeng
Zhihao Yu
Ying Zhao
Jun Xie
Rongfang Lan
Zhong Ma
Lijia Pan
Ke Cao
Yang Lu
Daowei He
Hongkai Ning
Wanqing Meng
Yang Yang
Xiaoqing Chen
Weisheng Li
Jiawei Wang
Danfeng Pan
Xuecou Tu
Wenxing Huo
Xian Huang
Dongquan Shi
Ling Li
Ming Liu
Yi Shi
Xue Feng
Paddy K. L. Chan
Xinran Wang
spellingShingle Zhongzhong Luo
Boyu Peng
Junpeng Zeng
Zhihao Yu
Ying Zhao
Jun Xie
Rongfang Lan
Zhong Ma
Lijia Pan
Ke Cao
Yang Lu
Daowei He
Hongkai Ning
Wanqing Meng
Yang Yang
Xiaoqing Chen
Weisheng Li
Jiawei Wang
Danfeng Pan
Xuecou Tu
Wenxing Huo
Xian Huang
Dongquan Shi
Ling Li
Ming Liu
Yi Shi
Xue Feng
Paddy K. L. Chan
Xinran Wang
Sub-thermionic, ultra-high-gain organic transistors and circuits
Nature Communications
author_facet Zhongzhong Luo
Boyu Peng
Junpeng Zeng
Zhihao Yu
Ying Zhao
Jun Xie
Rongfang Lan
Zhong Ma
Lijia Pan
Ke Cao
Yang Lu
Daowei He
Hongkai Ning
Wanqing Meng
Yang Yang
Xiaoqing Chen
Weisheng Li
Jiawei Wang
Danfeng Pan
Xuecou Tu
Wenxing Huo
Xian Huang
Dongquan Shi
Ling Li
Ming Liu
Yi Shi
Xue Feng
Paddy K. L. Chan
Xinran Wang
author_sort Zhongzhong Luo
title Sub-thermionic, ultra-high-gain organic transistors and circuits
title_short Sub-thermionic, ultra-high-gain organic transistors and circuits
title_full Sub-thermionic, ultra-high-gain organic transistors and circuits
title_fullStr Sub-thermionic, ultra-high-gain organic transistors and circuits
title_full_unstemmed Sub-thermionic, ultra-high-gain organic transistors and circuits
title_sort sub-thermionic, ultra-high-gain organic transistors and circuits
publisher Nature Publishing Group
series Nature Communications
issn 2041-1723
publishDate 2021-03-01
description Exploiting negative capacitance effects in organic thin-film transistors (OTFTs) is advantageous for enhancing device performance. Here, the authors report solution-processed sub-thermionic OTFTs and circuits with ferroelectric hafnium oxides that show ultra-low power and ultra-high gain.
url https://doi.org/10.1038/s41467-021-22192-2
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spelling doaj-c28cfc85934841b4bb20c0a57d71d4392021-03-28T11:12:35ZengNature Publishing GroupNature Communications2041-17232021-03-011211910.1038/s41467-021-22192-2Sub-thermionic, ultra-high-gain organic transistors and circuitsZhongzhong Luo0Boyu Peng1Junpeng Zeng2Zhihao Yu3Ying Zhao4Jun Xie5Rongfang Lan6Zhong Ma7Lijia Pan8Ke Cao9Yang Lu10Daowei He11Hongkai Ning12Wanqing Meng13Yang Yang14Xiaoqing Chen15Weisheng Li16Jiawei Wang17Danfeng Pan18Xuecou Tu19Wenxing Huo20Xian Huang21Dongquan Shi22Ling Li23Ming Liu24Yi Shi25Xue Feng26Paddy K. L. Chan27Xinran Wang28National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing UniversityDepartment of Mechanical Engineering, The University of Hongkong, Pok Fu Lam RoadNational Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing UniversityNational Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing UniversityKey Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of SciencesDepartment of Cardiology, Nanjing Drum Tower Hospital, The Affiliated Hospital of Nanjing University Medical SchoolDepartment of Cardiology, Nanjing Drum Tower Hospital, The Affiliated Hospital of Nanjing University Medical SchoolNational Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing UniversityNational Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing UniversityDepartment of Mechanical Engineering, City University of Hong Kong, KowloonDepartment of Mechanical Engineering, City University of Hong Kong, KowloonNational Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing UniversityNational Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing UniversityNational Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing UniversityNational Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing UniversityNational Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing UniversityNational Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing UniversityKey Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of SciencesNational Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing UniversityNational Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing UniversityDepartment of Biomedical Engineering, Tianjin UniversityDepartment of Biomedical Engineering, Tianjin UniversityDepartment of Sports Medicine and Adult Reconstructive Surgery, Nanjing Drum Tower Hospital, The Affiliated Hospital of Nanjing University Medical SchoolKey Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of SciencesKey Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of SciencesNational Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing UniversityAML, Department of Engineering Mechanics, Center for Flexible Electronics Technology, Tsinghua UniversityDepartment of Mechanical Engineering, The University of Hongkong, Pok Fu Lam RoadNational Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing UniversityExploiting negative capacitance effects in organic thin-film transistors (OTFTs) is advantageous for enhancing device performance. Here, the authors report solution-processed sub-thermionic OTFTs and circuits with ferroelectric hafnium oxides that show ultra-low power and ultra-high gain.https://doi.org/10.1038/s41467-021-22192-2