$Lateral <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV$

Lateral <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV

In this paper, we report on achieving the first high performance lateral β-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diode (SBD) on sapphire substrate via transferring β-Ga<sub>2</sub>O<sub>3</sub> nano-membrane channel from a...

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Bibliographic Details
Main Authors:	Zhuangzhuang Hu, Hong Zhou, Kui Dang, Yuncong Cai, Zhaoqing Feng, Yangyang Gao, Qian Feng, Jincheng Zhang, Yue Hao
Format:	Article
Language:	English
Published:	IEEE 2018-01-01
Series:	IEEE Journal of the Electron Devices Society
Subjects:	β-Ga₂O₃ nano-membrane Sapphire substrate lateral Schottky barrier diode breakdown
Online Access:	https://ieeexplore.ieee.org/document/8410905/

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