Memristors With Controllable Data Volatility by Loading Metal Ion-Added Ionic Liquids

• Main Authors: Hiroshi Sato, Hisashi Shima, Toshiki Nokami, Toshiyuki Itoh, Yusei Honma, Yasuhisa Naitoh, Hiroyuki Akinaga, Kentaro Kinoshita
• Format: Article
• Language: English
• Published: Frontiers Media S.A. 2021-03-01
• Series: Frontiers in Nanotechnology
• Subjects: conductive bridge RAM; data retention characteristics; AI devices; fading memory; ionic liquids; reservoir devices
• Online Access: https://www.frontiersin.org/articles/10.3389/fnano.2021.660563/full

We demonstrate a new memristive device (IL-Memristor), in which an ionic liquid (IL) serve as a material to control the volatility of the resistance. ILs are ultra-low vapor pressure liquids consisting of cations and anions at room temperature, and their introduction into solid-state processes can provide new avenues in electronic device fabrication. Because the device resistance change in IL-Memristor is governed by a Cu filament formation/rupture in IL, we considered that the Cu filament stability affects the data retention characteristics. Therefore, we controlled the data retention time by clarifying the corrosion mechanism and performing the IL material design based on the results. It was found out that the corrosion of Cu filaments in the IL was ruled by the comproportionation reaction, and that the data retention characteristics of the devices varied depending on the valence of Cu ions added to the IL. Actually, IL-Memristors involving Cu(II) and Cu(I) show volatile and non-volatile nature with respect to the programmed resistance value, respectively. Our results showed that data volatility can be controlled through the metal ion species added to the IL. The present work indicates that IL-memristor is suitable for unique applications such as artificial neuron with tunable fading characteristics that is applicable to phenomena with a wide range of timescale.