Transport and Field Emission Properties of MoS2 Bilayers
We report the electrical characterization and field emission properties of MoS 2 bilayers deposited on...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2018-03-01
|
Series: | Nanomaterials |
Subjects: | |
Online Access: | http://www.mdpi.com/2079-4991/8/3/151 |
Summary: | We report the electrical characterization and field emission properties of
MoS
2
bilayers deposited on a
SiO
2
/
Si
substrate. Current–voltage characteristics are measured in the back-gate transistor configuration, with
Ti
contacts patterned by electron beam lithography. We confirm the n-type character of as-grown
MoS
2
and we report normally-on field-effect transistors. Local characterization of field emission is performed inside a scanning electron microscope chamber with piezo-controlled tungsten tips working as the anode and the cathode. We demonstrate that an electric field of
~
200
V
/
μ
m
is able to extract current from the flat part of
MoS
2
bilayers, which can therefore be conveniently exploited for field emission applications even in low field enhancement configurations. We show that a Fowler–Nordheim model, modified to account for electron confinement in two-dimensional (2D) materials, fully describes the emission process. |
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ISSN: | 2079-4991 |