Highly-Sensitive Textile Pressure Sensors Enabled by Suspended-Type All Carbon Nanotube Fiber Transistor Architecture
Among various wearable health-monitoring electronics, electronic textiles (e-textiles) have been considered as an appropriate alternative for a convenient self-diagnosis approach. However, for the realization of the wearable e-textiles capable of detecting subtle human physiological signals, the low...
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doaj-c79eb4c77051487ebe6a0f4cfaf47a9d2020-12-15T00:03:56ZengMDPI AGMicromachines2072-666X2020-12-01111103110310.3390/mi11121103Highly-Sensitive Textile Pressure Sensors Enabled by Suspended-Type All Carbon Nanotube Fiber Transistor ArchitectureJae Sang Heo0Keon Woo Lee1Jun Ho Lee2Seung Beom Shin3Jeong Wan Jo4Yong Hoon Kim5Myung Gil Kim6Sung Kyu Park7School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, KoreaDepartment of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, KoreaDepartment of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, KoreaDepartment of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, KoreaDepartment of Electrical Engineering, University of Cambridge, Cambridge CB2 1TN, UKSchool of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, KoreaSchool of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, KoreaDepartment of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, KoreaAmong various wearable health-monitoring electronics, electronic textiles (e-textiles) have been considered as an appropriate alternative for a convenient self-diagnosis approach. However, for the realization of the wearable e-textiles capable of detecting subtle human physiological signals, the low-sensing performances still remain as a challenge. In this study, a fiber transistor-type ultra-sensitive pressure sensor (FTPS) with a new architecture that is thread-like suspended dry-spun carbon nanotube (CNT) fiber source (S)/drain (D) electrodes is proposed as the first proof of concept for the detection of very low-pressure stimuli. As a result, the pressure sensor shows an ultra-high sensitivity of ~3050 Pa<sup>−1</sup> and a response/recovery time of 258/114 ms in the very low-pressure range of <300 Pa as the fiber transistor was operated in the linear region (<i>V</i><sub>DS</sub> = −0.1 V). Also, it was observed that the pressure-sensing characteristics are highly dependent on the contact pressure between the top CNT fiber S/D electrodes and the single-walled carbon nanotubes (SWCNTs) channel layer due to the air-gap made by the suspended S/D electrode fibers on the channel layers of fiber transistors. Furthermore, due to their remarkable sensitivity in the low-pressure range, an acoustic wave that has a very tiny pressure could be detected using the FTPS.https://www.mdpi.com/2072-666X/11/12/1103fiber transistorspressure sensorse-textilewearable devicesactive-matrix sensors |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Jae Sang Heo Keon Woo Lee Jun Ho Lee Seung Beom Shin Jeong Wan Jo Yong Hoon Kim Myung Gil Kim Sung Kyu Park |
spellingShingle |
Jae Sang Heo Keon Woo Lee Jun Ho Lee Seung Beom Shin Jeong Wan Jo Yong Hoon Kim Myung Gil Kim Sung Kyu Park Highly-Sensitive Textile Pressure Sensors Enabled by Suspended-Type All Carbon Nanotube Fiber Transistor Architecture Micromachines fiber transistors pressure sensors e-textile wearable devices active-matrix sensors |
author_facet |
Jae Sang Heo Keon Woo Lee Jun Ho Lee Seung Beom Shin Jeong Wan Jo Yong Hoon Kim Myung Gil Kim Sung Kyu Park |
author_sort |
Jae Sang Heo |
title |
Highly-Sensitive Textile Pressure Sensors Enabled by Suspended-Type All Carbon Nanotube Fiber Transistor Architecture |
title_short |
Highly-Sensitive Textile Pressure Sensors Enabled by Suspended-Type All Carbon Nanotube Fiber Transistor Architecture |
title_full |
Highly-Sensitive Textile Pressure Sensors Enabled by Suspended-Type All Carbon Nanotube Fiber Transistor Architecture |
title_fullStr |
Highly-Sensitive Textile Pressure Sensors Enabled by Suspended-Type All Carbon Nanotube Fiber Transistor Architecture |
title_full_unstemmed |
Highly-Sensitive Textile Pressure Sensors Enabled by Suspended-Type All Carbon Nanotube Fiber Transistor Architecture |
title_sort |
highly-sensitive textile pressure sensors enabled by suspended-type all carbon nanotube fiber transistor architecture |
publisher |
MDPI AG |
series |
Micromachines |
issn |
2072-666X |
publishDate |
2020-12-01 |
description |
Among various wearable health-monitoring electronics, electronic textiles (e-textiles) have been considered as an appropriate alternative for a convenient self-diagnosis approach. However, for the realization of the wearable e-textiles capable of detecting subtle human physiological signals, the low-sensing performances still remain as a challenge. In this study, a fiber transistor-type ultra-sensitive pressure sensor (FTPS) with a new architecture that is thread-like suspended dry-spun carbon nanotube (CNT) fiber source (S)/drain (D) electrodes is proposed as the first proof of concept for the detection of very low-pressure stimuli. As a result, the pressure sensor shows an ultra-high sensitivity of ~3050 Pa<sup>−1</sup> and a response/recovery time of 258/114 ms in the very low-pressure range of <300 Pa as the fiber transistor was operated in the linear region (<i>V</i><sub>DS</sub> = −0.1 V). Also, it was observed that the pressure-sensing characteristics are highly dependent on the contact pressure between the top CNT fiber S/D electrodes and the single-walled carbon nanotubes (SWCNTs) channel layer due to the air-gap made by the suspended S/D electrode fibers on the channel layers of fiber transistors. Furthermore, due to their remarkable sensitivity in the low-pressure range, an acoustic wave that has a very tiny pressure could be detected using the FTPS. |
topic |
fiber transistors pressure sensors e-textile wearable devices active-matrix sensors |
url |
https://www.mdpi.com/2072-666X/11/12/1103 |
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