A Kind of Coating Method of GaN-MOCVD Graphite Susceptor

A Kind of Coating Method of GaN-MOCVD Graphite Susceptor

A novel coating method for the GaN-MOCVD graphite susceptor is proposed in the paper, which means that the upper surface and sides of the graphite susceptor are covered with a low emissivity material coating, and the surface under the susceptor is covered with a high emissivity SiC coating. By using...

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Main Authors: Xiao-feng Wu, Shi-gang Hu, Hai-ou Li, Jin Li, Zai-fang Xi, Ying-lu Hu
Format: Article
Language:English
Published: Hindawi Limited 2013-01-01
Series:Journal of Nanomaterials
Online Access:http://dx.doi.org/10.1155/2013/137564
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spelling doaj-c945f1158e004776948f65a4243a698c2020-11-24T23:02:08ZengHindawi LimitedJournal of Nanomaterials1687-41101687-41292013-01-01201310.1155/2013/137564137564A Kind of Coating Method of GaN-MOCVD Graphite SusceptorXiao-feng Wu0Shi-gang Hu1Hai-ou Li2Jin Li3Zai-fang Xi4Ying-lu Hu5School of Information and Electrical Engineering, Hunan University of Science and Technology, Xiangtan 411201, ChinaSchool of Information and Electrical Engineering, Hunan University of Science and Technology, Xiangtan 411201, ChinaGuangxi Experiment Center of Information Science, Guilin University of Electronic Technology, Guilin 541004, ChinaSchool of Information and Electrical Engineering, Hunan University of Science and Technology, Xiangtan 411201, ChinaSchool of Information and Electrical Engineering, Hunan University of Science and Technology, Xiangtan 411201, ChinaThe 41st Institute of China Electronics Technology Group Corporation, Qingdao 266555, ChinaA novel coating method for the GaN-MOCVD graphite susceptor is proposed in the paper, which means that the upper surface and sides of the graphite susceptor are covered with a low emissivity material coating, and the surface under the susceptor is covered with a high emissivity SiC coating. By using finite element analysis software COMSOL Multiphysics, the temperature field of the susceptors without coating, with common SiC coating, and with improved coating is obtained and compared, which shows that the susceptor with the improved coating not only increases the heating efficiency of the heater, but also improves the temperature uniformity of the substrate, which can be of great benefit to the film growth. In addition, this improved coating for the susceptor has the same heating sensitivity as the common SiC coating.http://dx.doi.org/10.1155/2013/137564
collection DOAJ
language English
format Article
sources DOAJ
author Xiao-feng Wu
Shi-gang Hu
Hai-ou Li
Jin Li
Zai-fang Xi
Ying-lu Hu
spellingShingle Xiao-feng Wu
Shi-gang Hu
Hai-ou Li
Jin Li
Zai-fang Xi
Ying-lu Hu
A Kind of Coating Method of GaN-MOCVD Graphite Susceptor
Journal of Nanomaterials
author_facet Xiao-feng Wu
Shi-gang Hu
Hai-ou Li
Jin Li
Zai-fang Xi
Ying-lu Hu
author_sort Xiao-feng Wu
title A Kind of Coating Method of GaN-MOCVD Graphite Susceptor
title_short A Kind of Coating Method of GaN-MOCVD Graphite Susceptor
title_full A Kind of Coating Method of GaN-MOCVD Graphite Susceptor
title_fullStr A Kind of Coating Method of GaN-MOCVD Graphite Susceptor
title_full_unstemmed A Kind of Coating Method of GaN-MOCVD Graphite Susceptor
title_sort kind of coating method of gan-mocvd graphite susceptor
publisher Hindawi Limited
series Journal of Nanomaterials
issn 1687-4110
1687-4129
publishDate 2013-01-01
description A novel coating method for the GaN-MOCVD graphite susceptor is proposed in the paper, which means that the upper surface and sides of the graphite susceptor are covered with a low emissivity material coating, and the surface under the susceptor is covered with a high emissivity SiC coating. By using finite element analysis software COMSOL Multiphysics, the temperature field of the susceptors without coating, with common SiC coating, and with improved coating is obtained and compared, which shows that the susceptor with the improved coating not only increases the heating efficiency of the heater, but also improves the temperature uniformity of the substrate, which can be of great benefit to the film growth. In addition, this improved coating for the susceptor has the same heating sensitivity as the common SiC coating.
url http://dx.doi.org/10.1155/2013/137564
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