Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells

This paper reports the preparation of wide gap p-type hydrogenated microcrystalline silicon oxide (p-μc-SiO:H) films using a 40 MHz very high frequency plasma enhanced chemical vapor deposition technique. The reported work focused on the effects of the CO2/SiH4 ratio on the properties of p-μc-SiO:H...

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Main Authors: Jaran Sritharathikhun, Taweewat Krajangsang, Apichan Moollakorn, Sorapong Inthisang, Amornrat Limmanee, Aswin Hongsingtong, Nattaphong Boriraksantikul, Tianchai Taratiwat, Nirod Akarapanjavit, Kobsak Sriprapha
Format: Article
Language:English
Published: Hindawi Limited 2014-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2014/872849
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spelling doaj-c9abda23c4a74625b23896409ce0747a2020-11-24T22:46:56ZengHindawi LimitedInternational Journal of Photoenergy1110-662X1687-529X2014-01-01201410.1155/2014/872849872849Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar CellsJaran Sritharathikhun0Taweewat Krajangsang1Apichan Moollakorn2Sorapong Inthisang3Amornrat Limmanee4Aswin Hongsingtong5Nattaphong Boriraksantikul6Tianchai Taratiwat7Nirod Akarapanjavit8Kobsak Sriprapha9Solar Energy Technology Laboratory, National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandPTT Research & Technology Institute, PTT Public Company Limited, 70 Moo2 Phahonyothin Road, Sanubtup, Wangnoi, Ayutthaya 13170, ThailandPTT Research & Technology Institute, PTT Public Company Limited, 70 Moo2 Phahonyothin Road, Sanubtup, Wangnoi, Ayutthaya 13170, ThailandPTT Research & Technology Institute, PTT Public Company Limited, 70 Moo2 Phahonyothin Road, Sanubtup, Wangnoi, Ayutthaya 13170, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandThis paper reports the preparation of wide gap p-type hydrogenated microcrystalline silicon oxide (p-μc-SiO:H) films using a 40 MHz very high frequency plasma enhanced chemical vapor deposition technique. The reported work focused on the effects of the CO2/SiH4 ratio on the properties of p-μc-SiO:H films and the effectiveness of the films as an emitter layer of crystalline silicon heterojunction (c-Si-HJ) solar cells. A p-μc-SiO:H film with a wide optical band gap (E04), 2.1 eV, can be obtained by increasing the CO2/SiH4 ratio; however, the tradeoff between E04 and dark conductivity must be considered. The CO2/SiH4 ratio of the p-μc-SiO:H emitter layer also significantly affects the performance of the solar cells. Compared to the cell using p-μc-Si:H (CO2/SiH4 = 0), the cell with the p-μc-SiO:H emitter layer performs more efficiently. We have achieved the highest efficiency of 18.3% with an open-circuit voltage (Voc) of 692 mV from the cell using the p-μc-SiO:H layer. The enhancement in the Voc and the efficiency of the solar cells verified the potential of the p-μc-SiO:H films for use as the emitter layer in c-Si-HJ solar cells.http://dx.doi.org/10.1155/2014/872849
collection DOAJ
language English
format Article
sources DOAJ
author Jaran Sritharathikhun
Taweewat Krajangsang
Apichan Moollakorn
Sorapong Inthisang
Amornrat Limmanee
Aswin Hongsingtong
Nattaphong Boriraksantikul
Tianchai Taratiwat
Nirod Akarapanjavit
Kobsak Sriprapha
spellingShingle Jaran Sritharathikhun
Taweewat Krajangsang
Apichan Moollakorn
Sorapong Inthisang
Amornrat Limmanee
Aswin Hongsingtong
Nattaphong Boriraksantikul
Tianchai Taratiwat
Nirod Akarapanjavit
Kobsak Sriprapha
Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells
International Journal of Photoenergy
author_facet Jaran Sritharathikhun
Taweewat Krajangsang
Apichan Moollakorn
Sorapong Inthisang
Amornrat Limmanee
Aswin Hongsingtong
Nattaphong Boriraksantikul
Tianchai Taratiwat
Nirod Akarapanjavit
Kobsak Sriprapha
author_sort Jaran Sritharathikhun
title Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells
title_short Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells
title_full Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells
title_fullStr Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells
title_full_unstemmed Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells
title_sort effect of the co2/sih4 ratio in the p-μc-sio:h emitter layer on the performance of crystalline silicon heterojunction solar cells
publisher Hindawi Limited
series International Journal of Photoenergy
issn 1110-662X
1687-529X
publishDate 2014-01-01
description This paper reports the preparation of wide gap p-type hydrogenated microcrystalline silicon oxide (p-μc-SiO:H) films using a 40 MHz very high frequency plasma enhanced chemical vapor deposition technique. The reported work focused on the effects of the CO2/SiH4 ratio on the properties of p-μc-SiO:H films and the effectiveness of the films as an emitter layer of crystalline silicon heterojunction (c-Si-HJ) solar cells. A p-μc-SiO:H film with a wide optical band gap (E04), 2.1 eV, can be obtained by increasing the CO2/SiH4 ratio; however, the tradeoff between E04 and dark conductivity must be considered. The CO2/SiH4 ratio of the p-μc-SiO:H emitter layer also significantly affects the performance of the solar cells. Compared to the cell using p-μc-Si:H (CO2/SiH4 = 0), the cell with the p-μc-SiO:H emitter layer performs more efficiently. We have achieved the highest efficiency of 18.3% with an open-circuit voltage (Voc) of 692 mV from the cell using the p-μc-SiO:H layer. The enhancement in the Voc and the efficiency of the solar cells verified the potential of the p-μc-SiO:H films for use as the emitter layer in c-Si-HJ solar cells.
url http://dx.doi.org/10.1155/2014/872849
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