Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells
This paper reports the preparation of wide gap p-type hydrogenated microcrystalline silicon oxide (p-μc-SiO:H) films using a 40 MHz very high frequency plasma enhanced chemical vapor deposition technique. The reported work focused on the effects of the CO2/SiH4 ratio on the properties of p-μc-SiO:H...
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Series: | International Journal of Photoenergy |
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doaj-c9abda23c4a74625b23896409ce0747a2020-11-24T22:46:56ZengHindawi LimitedInternational Journal of Photoenergy1110-662X1687-529X2014-01-01201410.1155/2014/872849872849Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar CellsJaran Sritharathikhun0Taweewat Krajangsang1Apichan Moollakorn2Sorapong Inthisang3Amornrat Limmanee4Aswin Hongsingtong5Nattaphong Boriraksantikul6Tianchai Taratiwat7Nirod Akarapanjavit8Kobsak Sriprapha9Solar Energy Technology Laboratory, National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandPTT Research & Technology Institute, PTT Public Company Limited, 70 Moo2 Phahonyothin Road, Sanubtup, Wangnoi, Ayutthaya 13170, ThailandPTT Research & Technology Institute, PTT Public Company Limited, 70 Moo2 Phahonyothin Road, Sanubtup, Wangnoi, Ayutthaya 13170, ThailandPTT Research & Technology Institute, PTT Public Company Limited, 70 Moo2 Phahonyothin Road, Sanubtup, Wangnoi, Ayutthaya 13170, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandThis paper reports the preparation of wide gap p-type hydrogenated microcrystalline silicon oxide (p-μc-SiO:H) films using a 40 MHz very high frequency plasma enhanced chemical vapor deposition technique. The reported work focused on the effects of the CO2/SiH4 ratio on the properties of p-μc-SiO:H films and the effectiveness of the films as an emitter layer of crystalline silicon heterojunction (c-Si-HJ) solar cells. A p-μc-SiO:H film with a wide optical band gap (E04), 2.1 eV, can be obtained by increasing the CO2/SiH4 ratio; however, the tradeoff between E04 and dark conductivity must be considered. The CO2/SiH4 ratio of the p-μc-SiO:H emitter layer also significantly affects the performance of the solar cells. Compared to the cell using p-μc-Si:H (CO2/SiH4 = 0), the cell with the p-μc-SiO:H emitter layer performs more efficiently. We have achieved the highest efficiency of 18.3% with an open-circuit voltage (Voc) of 692 mV from the cell using the p-μc-SiO:H layer. The enhancement in the Voc and the efficiency of the solar cells verified the potential of the p-μc-SiO:H films for use as the emitter layer in c-Si-HJ solar cells.http://dx.doi.org/10.1155/2014/872849 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Jaran Sritharathikhun Taweewat Krajangsang Apichan Moollakorn Sorapong Inthisang Amornrat Limmanee Aswin Hongsingtong Nattaphong Boriraksantikul Tianchai Taratiwat Nirod Akarapanjavit Kobsak Sriprapha |
spellingShingle |
Jaran Sritharathikhun Taweewat Krajangsang Apichan Moollakorn Sorapong Inthisang Amornrat Limmanee Aswin Hongsingtong Nattaphong Boriraksantikul Tianchai Taratiwat Nirod Akarapanjavit Kobsak Sriprapha Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells International Journal of Photoenergy |
author_facet |
Jaran Sritharathikhun Taweewat Krajangsang Apichan Moollakorn Sorapong Inthisang Amornrat Limmanee Aswin Hongsingtong Nattaphong Boriraksantikul Tianchai Taratiwat Nirod Akarapanjavit Kobsak Sriprapha |
author_sort |
Jaran Sritharathikhun |
title |
Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells |
title_short |
Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells |
title_full |
Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells |
title_fullStr |
Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells |
title_full_unstemmed |
Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells |
title_sort |
effect of the co2/sih4 ratio in the p-μc-sio:h emitter layer on the performance of crystalline silicon heterojunction solar cells |
publisher |
Hindawi Limited |
series |
International Journal of Photoenergy |
issn |
1110-662X 1687-529X |
publishDate |
2014-01-01 |
description |
This paper reports the preparation of wide gap p-type hydrogenated microcrystalline silicon oxide (p-μc-SiO:H) films using a 40 MHz very high frequency plasma enhanced chemical vapor deposition technique. The reported work focused on the effects of the CO2/SiH4 ratio on the properties of p-μc-SiO:H films and the effectiveness of the films as an emitter layer of crystalline silicon heterojunction (c-Si-HJ) solar cells. A p-μc-SiO:H film with a wide optical band gap (E04), 2.1 eV, can be obtained by increasing the CO2/SiH4 ratio; however, the tradeoff between E04 and dark conductivity must be considered. The CO2/SiH4 ratio of the p-μc-SiO:H emitter layer also significantly affects the performance of the solar cells. Compared to the cell using p-μc-Si:H (CO2/SiH4 = 0), the cell with the p-μc-SiO:H emitter layer performs more efficiently. We have achieved the highest efficiency of 18.3% with an open-circuit voltage (Voc) of 692 mV from the cell using the p-μc-SiO:H layer. The enhancement in the Voc and the efficiency of the solar cells verified the potential of the p-μc-SiO:H films for use as the emitter layer in c-Si-HJ solar cells. |
url |
http://dx.doi.org/10.1155/2014/872849 |
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