Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors

Here, we report on the use of a graphene oxide (GO)/polystyrene (PS) bilayer as a gate dielectric for low-voltage organic field-effect transistors (OFETs). The hydrophilic functional groups of GO cause surface trapping and high gate leakage, which can be overcome by introducing a layer of PS&#82...

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Main Authors:	Sooji Nam, Yong Jin Jeong, Joo Yeon Kim, Hansol Yang, Jaeyoung Jang
Format:	Article
Language:	English
Published:	MDPI AG 2018-12-01
Series:	Applied Sciences
Subjects:	graphene oxide polystyrene gate dielectric low voltage organic field-effect transistor
Online Access:	https://www.mdpi.com/2076-3417/9/1/2

id	doaj-cae796c2c7a64e5085801d7ef52677a6
record_format	Article
spelling	doaj-cae796c2c7a64e5085801d7ef52677a62020-11-24T22:05:03ZengMDPI AGApplied Sciences2076-34172018-12-0191210.3390/app9010002app9010002Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect TransistorsSooji Nam0Yong Jin Jeong1Joo Yeon Kim2Hansol Yang3Jaeyoung Jang4Realistic Display Research Group, Electronics and Telecommunications Research Institute, Daejeon 34129, KoreaDepartment of Energy Engineering, Hanyang University, Seoul 04763, KoreaRealistic Display Research Group, Electronics and Telecommunications Research Institute, Daejeon 34129, KoreaDepartment of Energy Engineering, Hanyang University, Seoul 04763, KoreaDepartment of Energy Engineering, Hanyang University, Seoul 04763, KoreaHere, we report on the use of a graphene oxide (GO)/polystyrene (PS) bilayer as a gate dielectric for low-voltage organic field-effect transistors (OFETs). The hydrophilic functional groups of GO cause surface trapping and high gate leakage, which can be overcome by introducing a layer of PS—a hydrophobic polymer—onto the top surface of GO. The GO/PS gate dielectric shows reduced surface roughness and gate leakage while maintaining a high capacitance of 37.8 nF cm<sup>−2</sup>. The resulting OFETs show high-performance operation with a high mobility of 1.05 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> within a low operating voltage of −5 V.https://www.mdpi.com/2076-3417/9/1/2graphene oxidepolystyrenegate dielectriclow voltageorganic field-effect transistor
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Sooji Nam Yong Jin Jeong Joo Yeon Kim Hansol Yang Jaeyoung Jang
spellingShingle	Sooji Nam Yong Jin Jeong Joo Yeon Kim Hansol Yang Jaeyoung Jang Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors Applied Sciences graphene oxide polystyrene gate dielectric low voltage organic field-effect transistor
author_facet	Sooji Nam Yong Jin Jeong Joo Yeon Kim Hansol Yang Jaeyoung Jang
author_sort	Sooji Nam
title	Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors
title_short	Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors
title_full	Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors
title_fullStr	Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors
title_full_unstemmed	Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors
title_sort	graphene oxide/polystyrene bilayer gate dielectrics for low-voltage organic field-effect transistors
publisher	MDPI AG
series	Applied Sciences
issn	2076-3417
publishDate	2018-12-01
description	Here, we report on the use of a graphene oxide (GO)/polystyrene (PS) bilayer as a gate dielectric for low-voltage organic field-effect transistors (OFETs). The hydrophilic functional groups of GO cause surface trapping and high gate leakage, which can be overcome by introducing a layer of PS—a hydrophobic polymer—onto the top surface of GO. The GO/PS gate dielectric shows reduced surface roughness and gate leakage while maintaining a high capacitance of 37.8 nF cm<sup>−2</sup>. The resulting OFETs show high-performance operation with a high mobility of 1.05 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> within a low operating voltage of −5 V.
topic	graphene oxide polystyrene gate dielectric low voltage organic field-effect transistor
url	https://www.mdpi.com/2076-3417/9/1/2
work_keys_str_mv	AT soojinam grapheneoxidepolystyrenebilayergatedielectricsforlowvoltageorganicfieldeffecttransistors AT yongjinjeong grapheneoxidepolystyrenebilayergatedielectricsforlowvoltageorganicfieldeffecttransistors AT jooyeonkim grapheneoxidepolystyrenebilayergatedielectricsforlowvoltageorganicfieldeffecttransistors AT hansolyang grapheneoxidepolystyrenebilayergatedielectricsforlowvoltageorganicfieldeffecttransistors AT jaeyoungjang grapheneoxidepolystyrenebilayergatedielectricsforlowvoltageorganicfieldeffecttransistors
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Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors

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