Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors

Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors

Here, we report on the use of a graphene oxide (GO)/polystyrene (PS) bilayer as a gate dielectric for low-voltage organic field-effect transistors (OFETs). The hydrophilic functional groups of GO cause surface trapping and high gate leakage, which can be overcome by introducing a layer of PS&#82...

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Bibliographic Details
Main Authors: Sooji Nam, Yong Jin Jeong, Joo Yeon Kim, Hansol Yang, Jaeyoung Jang
Format: Article
Language:English
Published: MDPI AG 2018-12-01
Series:Applied Sciences
Subjects:
graphene oxide
polystyrene
gate dielectric
low voltage
organic field-effect transistor
Online Access:https://www.mdpi.com/2076-3417/9/1/2

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