Resistive Low-Temperature Sensor Based on the SiO2ZrO2 Film for Detection of High Concentrations of NO2 Gas

The SiO2ZrO2 composite films were prepared by means of sol-gel technology and characterized by scanning electron microscopy, energy dispersive X-ray (EDX) analysis, and X-ray diffraction. The presence of the stable monoclinic ZrO2...

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Main Authors:	Tatiana N. Myasoedova, Tatiana S. Mikhailova, Galina E. Yalovega, Nina K. Plugotarenko
Format:	Article
Language:	English
Published:	MDPI AG 2018-12-01
Series:	Chemosensors
Subjects:	gas sensor zirconia composite film nitrogen dioxide
Online Access:	https://www.mdpi.com/2227-9040/6/4/67

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spelling	doaj-ccd8d40cfb8f4b9db350866a205109982020-11-24T23:26:21ZengMDPI AGChemosensors2227-90402018-12-01646710.3390/chemosensors6040067chemosensors6040067Resistive Low-Temperature Sensor Based on the SiO<sub>2</sub>ZrO<sub>2</sub> Film for Detection of High Concentrations of NO<sub>2</sub> GasTatiana N. Myasoedova0Tatiana S. Mikhailova1Galina E. Yalovega2Nina K. Plugotarenko3Institute of Nanotechnologies, Electronics and Equipment Engineering, Southern Federal University, Chekhov str. 2, 347928 Taganrog, RussiaInstitute of Nanotechnologies, Electronics and Equipment Engineering, Southern Federal University, Chekhov str. 2, 347928 Taganrog, RussiaFaculty of Physics, Southern Federal University, Zorge str. 5, 344090 Rostov-on-Don, RussiaInstitute of Nanotechnologies, Electronics and Equipment Engineering, Southern Federal University, Chekhov str. 2, 347928 Taganrog, RussiaThe SiO<sub>2</sub>ZrO<sub>2</sub> composite films were prepared by means of sol-gel technology and characterized by scanning electron microscopy, energy dispersive X-ray (EDX) analysis, and X-ray diffraction. The presence of the stable monoclinic ZrO<sub>2</sub> with an impurity of tetragonal phases is shown. The film surface is characterized by the presence of ZrOCl<sub>2</sub>·6H<sub>2</sub>O or ZrCl(OH)/ZrCl(OH)<sub>2</sub> grains. The crystallite size negligibly depends on the annealing temperature of the film and amount to 10⁻12 nm and 9⁻12 nm for the films thermally treated at 200 °C and 500 °C, respectively. The film’s resistance is rather sensitive to the presence of NO<sub>2</sub> impurities in the air at a low operating temperature (25 °C). Accelerated stability tests of the initial resistance showed high stability and reproducibility of the sensor based on the SiO<sub>2</sub>ZrO<sub>2</sub> film thermally treated at 500 °C.https://www.mdpi.com/2227-9040/6/4/67gas sensorzirconiacomposite filmnitrogen dioxide
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Tatiana N. Myasoedova Tatiana S. Mikhailova Galina E. Yalovega Nina K. Plugotarenko
spellingShingle	Tatiana N. Myasoedova Tatiana S. Mikhailova Galina E. Yalovega Nina K. Plugotarenko Resistive Low-Temperature Sensor Based on the SiO<sub>2</sub>ZrO<sub>2</sub> Film for Detection of High Concentrations of NO<sub>2</sub> Gas Chemosensors gas sensor zirconia composite film nitrogen dioxide
author_facet	Tatiana N. Myasoedova Tatiana S. Mikhailova Galina E. Yalovega Nina K. Plugotarenko
author_sort	Tatiana N. Myasoedova
title	Resistive Low-Temperature Sensor Based on the SiO<sub>2</sub>ZrO<sub>2</sub> Film for Detection of High Concentrations of NO<sub>2</sub> Gas
title_short	Resistive Low-Temperature Sensor Based on the SiO<sub>2</sub>ZrO<sub>2</sub> Film for Detection of High Concentrations of NO<sub>2</sub> Gas
title_full	Resistive Low-Temperature Sensor Based on the SiO<sub>2</sub>ZrO<sub>2</sub> Film for Detection of High Concentrations of NO<sub>2</sub> Gas
title_fullStr	Resistive Low-Temperature Sensor Based on the SiO<sub>2</sub>ZrO<sub>2</sub> Film for Detection of High Concentrations of NO<sub>2</sub> Gas
title_full_unstemmed	Resistive Low-Temperature Sensor Based on the SiO<sub>2</sub>ZrO<sub>2</sub> Film for Detection of High Concentrations of NO<sub>2</sub> Gas
title_sort	resistive low-temperature sensor based on the sio<sub>2</sub>zro<sub>2</sub> film for detection of high concentrations of no<sub>2</sub> gas
publisher	MDPI AG
series	Chemosensors
issn	2227-9040
publishDate	2018-12-01
description	The SiO<sub>2</sub>ZrO<sub>2</sub> composite films were prepared by means of sol-gel technology and characterized by scanning electron microscopy, energy dispersive X-ray (EDX) analysis, and X-ray diffraction. The presence of the stable monoclinic ZrO<sub>2</sub> with an impurity of tetragonal phases is shown. The film surface is characterized by the presence of ZrOCl<sub>2</sub>·6H<sub>2</sub>O or ZrCl(OH)/ZrCl(OH)<sub>2</sub> grains. The crystallite size negligibly depends on the annealing temperature of the film and amount to 10⁻12 nm and 9⁻12 nm for the films thermally treated at 200 °C and 500 °C, respectively. The film’s resistance is rather sensitive to the presence of NO<sub>2</sub> impurities in the air at a low operating temperature (25 °C). Accelerated stability tests of the initial resistance showed high stability and reproducibility of the sensor based on the SiO<sub>2</sub>ZrO<sub>2</sub> film thermally treated at 500 °C.
topic	gas sensor zirconia composite film nitrogen dioxide
url	https://www.mdpi.com/2227-9040/6/4/67
work_keys_str_mv	AT tatiananmyasoedova resistivelowtemperaturesensorbasedonthesiosub2subzrosub2subfilmfordetectionofhighconcentrationsofnosub2subgas AT tatianasmikhailova resistivelowtemperaturesensorbasedonthesiosub2subzrosub2subfilmfordetectionofhighconcentrationsofnosub2subgas AT galinaeyalovega resistivelowtemperaturesensorbasedonthesiosub2subzrosub2subfilmfordetectionofhighconcentrationsofnosub2subgas AT ninakplugotarenko resistivelowtemperaturesensorbasedonthesiosub2subzrosub2subfilmfordetectionofhighconcentrationsofnosub2subgas
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Resistive Low-Temperature Sensor Based on the SiO<sub>2</sub>ZrO<sub>2</sub> Film for Detection of High Concentrations of NO<sub>2</sub> Gas

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