Properties of indium tin oxide on black silicon after post-deposition annealing for heterojunction solar cells
Indium tin oxide (ITO) serves as an excellent anti-reflective coating (ARC) and transparent contact in optoelectronic devices including in crystalline silicon (c-Si) solar cells. To enhance broadband light absorption in the c-Si solar cells, black silicon (b-Si) surfaces can be used to reduce light...
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doaj-ce1c746953c44254a66df5ba2c5b2df52020-12-25T05:08:27ZengElsevierResults in Physics2211-37972020-12-0119103405Properties of indium tin oxide on black silicon after post-deposition annealing for heterojunction solar cellsAuwal Abdulkadir0Azlan Abdul Aziz1Mohd Zamir Pakhuruddin2Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia; Department of Physics, Umaru Musa Yar’adua University, P. M. B. 2218 Katsina, NigeriaNano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, MalaysiaNano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia; Corresponding author.Indium tin oxide (ITO) serves as an excellent anti-reflective coating (ARC) and transparent contact in optoelectronic devices including in crystalline silicon (c-Si) solar cells. To enhance broadband light absorption in the c-Si solar cells, black silicon (b-Si) surfaces can be used to reduce light reflection within 300–1100 nm wavelength region. In this work, properties of 300 nm-thick ITO on b-Si after post-deposition annealing with different temperatures (200–500 °C) are investigated for application in heterojunction solar cells. Annealing the ITO at 400 °C produces the highest crystalline quality, moderate surface reflection and optimum electrical properties. For electrical characterization, ITO/b-Si/NiO and ITO/c-Si/NiO reference solar cells are illuminated with white light LED-based solar simulator at illumination of 47 mW/cm2 and temperature of 25 °C. The ITO/b-Si/NiO solar cells demonstrate higher short-circuit current density (Jsc) and open-circuit voltage (Voc) when compared to the reference solar cells.http://www.sciencedirect.com/science/article/pii/S2211379720318726ITOBlack siliconAnnealingHeterojunctionSolar cell |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Auwal Abdulkadir Azlan Abdul Aziz Mohd Zamir Pakhuruddin |
spellingShingle |
Auwal Abdulkadir Azlan Abdul Aziz Mohd Zamir Pakhuruddin Properties of indium tin oxide on black silicon after post-deposition annealing for heterojunction solar cells Results in Physics ITO Black silicon Annealing Heterojunction Solar cell |
author_facet |
Auwal Abdulkadir Azlan Abdul Aziz Mohd Zamir Pakhuruddin |
author_sort |
Auwal Abdulkadir |
title |
Properties of indium tin oxide on black silicon after post-deposition annealing for heterojunction solar cells |
title_short |
Properties of indium tin oxide on black silicon after post-deposition annealing for heterojunction solar cells |
title_full |
Properties of indium tin oxide on black silicon after post-deposition annealing for heterojunction solar cells |
title_fullStr |
Properties of indium tin oxide on black silicon after post-deposition annealing for heterojunction solar cells |
title_full_unstemmed |
Properties of indium tin oxide on black silicon after post-deposition annealing for heterojunction solar cells |
title_sort |
properties of indium tin oxide on black silicon after post-deposition annealing for heterojunction solar cells |
publisher |
Elsevier |
series |
Results in Physics |
issn |
2211-3797 |
publishDate |
2020-12-01 |
description |
Indium tin oxide (ITO) serves as an excellent anti-reflective coating (ARC) and transparent contact in optoelectronic devices including in crystalline silicon (c-Si) solar cells. To enhance broadband light absorption in the c-Si solar cells, black silicon (b-Si) surfaces can be used to reduce light reflection within 300–1100 nm wavelength region. In this work, properties of 300 nm-thick ITO on b-Si after post-deposition annealing with different temperatures (200–500 °C) are investigated for application in heterojunction solar cells. Annealing the ITO at 400 °C produces the highest crystalline quality, moderate surface reflection and optimum electrical properties. For electrical characterization, ITO/b-Si/NiO and ITO/c-Si/NiO reference solar cells are illuminated with white light LED-based solar simulator at illumination of 47 mW/cm2 and temperature of 25 °C. The ITO/b-Si/NiO solar cells demonstrate higher short-circuit current density (Jsc) and open-circuit voltage (Voc) when compared to the reference solar cells. |
topic |
ITO Black silicon Annealing Heterojunction Solar cell |
url |
http://www.sciencedirect.com/science/article/pii/S2211379720318726 |
work_keys_str_mv |
AT auwalabdulkadir propertiesofindiumtinoxideonblacksiliconafterpostdepositionannealingforheterojunctionsolarcells AT azlanabdulaziz propertiesofindiumtinoxideonblacksiliconafterpostdepositionannealingforheterojunctionsolarcells AT mohdzamirpakhuruddin propertiesofindiumtinoxideonblacksiliconafterpostdepositionannealingforheterojunctionsolarcells |
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