Formation Energies of Antiphase Boundaries in GaAs and GaP: An ab Initio Study
Electronic and structural properties of antiphase boundaries in group III-V semiconductor compounds have been receiving increased attention due to the potential to integration of optically-active III-V heterostructures on silicon or germanium substrates. The formation energies of {110}, {111}, {112}...
Main Authors: | Oleg Rubel, Sergei D. Baranovskii |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2009-11-01
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Series: | International Journal of Molecular Sciences |
Subjects: | |
Online Access: | http://www.mdpi.com/1422-0067/10/12/5104/ |
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