Lithography-free fabrication of low operating voltage and large channel length graphene transistor with current saturation by utilizing Li+ of ion-conducting-oxide gate dielectric
The large channel length graphene field-effect transistor (GFET) can outperform its competitors due to its larger active area and lower noise. Such long channel length devices have numerous applications, e.g., in photodetectors, biosensors, etc. However, long channel length graphene devices are not...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0016466 |