Interface-Induced WSe2 In-plane Homojunction for High-Performance Photodetection
Abstract 2D transition metal dichalcogenides (TMDCs) have been extensively attractive for nano-electronics and nano-optoelectronics due to their unique properties. Especially, WSe2, having bipolar carrier transport ability and sizable bandgap, is a promising candidate for future photodetectors. Here...
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doaj-d0ca292f34cb47e788db3d0bebb53bf02020-11-25T03:01:16ZengSpringerOpenNanoscale Research Letters1556-276X2020-05-011511710.1186/s11671-020-03342-9Interface-Induced WSe2 In-plane Homojunction for High-Performance PhotodetectionJiawei Chi0Nan Guo1Yue Sun2Guohua Li3Lin Xiao4Qian Xuesen Laboratory of Space Technology, China Academy of Space TechnologyQian Xuesen Laboratory of Space Technology, China Academy of Space TechnologyQian Xuesen Laboratory of Space Technology, China Academy of Space TechnologyDepartment of Materials Science and Engineering, School of Mechanical Electronic & Information Engineering, China University of Mining & TechnologyQian Xuesen Laboratory of Space Technology, China Academy of Space TechnologyAbstract 2D transition metal dichalcogenides (TMDCs) have been extensively attractive for nano-electronics and nano-optoelectronics due to their unique properties. Especially, WSe2, having bipolar carrier transport ability and sizable bandgap, is a promising candidate for future photodetectors. Here, we report an in-plane WSe2 homojunction formed by the interface gate of the substrate. In this architecture, an insulated h-BN flake was used to make only part of WSe2 flake contact substrate directly. Finally, the structures of WSe2/substrate and WSe2/h-BN/substrate construct an in-plane homojunction. Interestingly, the device can operate in both photovoltaic and photoconductive modes at different biases. As a result, a responsivity of 1.07 A W−1 with a superior detectivity of over 1012 jones and a fast response time of 106 μs are obtained simultaneously. Compared with previously reported methods adopted by chemical doping or electrostatic gating with extra bias voltages, our design provides a more facile and efficient way for the development of high-performance WSe2-based photodetectors.http://link.springer.com/article/10.1186/s11671-020-03342-9Transition metal dichalcogenidesIn-plane homojunctionPhotodetectionInterface gate |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Jiawei Chi Nan Guo Yue Sun Guohua Li Lin Xiao |
spellingShingle |
Jiawei Chi Nan Guo Yue Sun Guohua Li Lin Xiao Interface-Induced WSe2 In-plane Homojunction for High-Performance Photodetection Nanoscale Research Letters Transition metal dichalcogenides In-plane homojunction Photodetection Interface gate |
author_facet |
Jiawei Chi Nan Guo Yue Sun Guohua Li Lin Xiao |
author_sort |
Jiawei Chi |
title |
Interface-Induced WSe2 In-plane Homojunction for High-Performance Photodetection |
title_short |
Interface-Induced WSe2 In-plane Homojunction for High-Performance Photodetection |
title_full |
Interface-Induced WSe2 In-plane Homojunction for High-Performance Photodetection |
title_fullStr |
Interface-Induced WSe2 In-plane Homojunction for High-Performance Photodetection |
title_full_unstemmed |
Interface-Induced WSe2 In-plane Homojunction for High-Performance Photodetection |
title_sort |
interface-induced wse2 in-plane homojunction for high-performance photodetection |
publisher |
SpringerOpen |
series |
Nanoscale Research Letters |
issn |
1556-276X |
publishDate |
2020-05-01 |
description |
Abstract 2D transition metal dichalcogenides (TMDCs) have been extensively attractive for nano-electronics and nano-optoelectronics due to their unique properties. Especially, WSe2, having bipolar carrier transport ability and sizable bandgap, is a promising candidate for future photodetectors. Here, we report an in-plane WSe2 homojunction formed by the interface gate of the substrate. In this architecture, an insulated h-BN flake was used to make only part of WSe2 flake contact substrate directly. Finally, the structures of WSe2/substrate and WSe2/h-BN/substrate construct an in-plane homojunction. Interestingly, the device can operate in both photovoltaic and photoconductive modes at different biases. As a result, a responsivity of 1.07 A W−1 with a superior detectivity of over 1012 jones and a fast response time of 106 μs are obtained simultaneously. Compared with previously reported methods adopted by chemical doping or electrostatic gating with extra bias voltages, our design provides a more facile and efficient way for the development of high-performance WSe2-based photodetectors. |
topic |
Transition metal dichalcogenides In-plane homojunction Photodetection Interface gate |
url |
http://link.springer.com/article/10.1186/s11671-020-03342-9 |
work_keys_str_mv |
AT jiaweichi interfaceinducedwse2inplanehomojunctionforhighperformancephotodetection AT nanguo interfaceinducedwse2inplanehomojunctionforhighperformancephotodetection AT yuesun interfaceinducedwse2inplanehomojunctionforhighperformancephotodetection AT guohuali interfaceinducedwse2inplanehomojunctionforhighperformancephotodetection AT linxiao interfaceinducedwse2inplanehomojunctionforhighperformancephotodetection |
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1724693977607700480 |