Effect of Ar+ beam sputtering on the magnetic anisotropy of Fe thin films deposited on the MgO(001) substrate

The Fe thin films with different initial thickness were prepared on MgO(001) substrate. Ar+ ion beam having energy of 3 keV was used to sputter the film at incident angle of 80° with respect to the film normal. Low energy electron diffraction (LEED) was employed to study the morphology and crystal q...

Full description

Bibliographic Details
Main Authors: Syed Sheraz Ahmad, Wei He, Yong-Sheng Zhang, Jin Tang, Yan Li, Qeemat Gul, Xiang-Qun Zhang, Zhao-Hua Cheng
Format: Article
Language:English
Published: Elsevier 2017-01-01
Series:Results in Physics
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379717304813
id doaj-d1a9f6b9ba2b412da97ff94f1cb65ae7
record_format Article
spelling doaj-d1a9f6b9ba2b412da97ff94f1cb65ae72020-11-25T02:11:48ZengElsevierResults in Physics2211-37972017-01-01715311535Effect of Ar+ beam sputtering on the magnetic anisotropy of Fe thin films deposited on the MgO(001) substrateSyed Sheraz Ahmad0Wei He1Yong-Sheng Zhang2Jin Tang3Yan Li4Qeemat Gul5Xiang-Qun Zhang6Zhao-Hua Cheng7State Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaState Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaState Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaState Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaState Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaState Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaState Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaState Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China; Corresponding author at: State Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.The Fe thin films with different initial thickness were prepared on MgO(001) substrate. Ar+ ion beam having energy of 3 keV was used to sputter the film at incident angle of 80° with respect to the film normal. Low energy electron diffraction (LEED) was employed to study the morphology and crystal quality of the film. Moreover surface magneto-optical Kerr effect (SMOKE) and anisotropic magnetoresistance (AMR) setups were used to investigate the magnetic properties of the Fe film. The values of magnetocrystalline anisotropy K1 and induced in-plane uniaxial magnetic anisotropy (UMA) Ku were derived from torque curves on the base of AMR results and found that the value of Ku was increasing with increasing the sputtering time while the intrinsic magnetocrystalline anisotropy K1 was not affected by sputtering. Similarly it is observed that the value of K1 increases with the thickness. We noted that ion beam sputtering can be used as an effective technique of manipulating the magnetic anisotropy of ultrathin magnetic films.http://www.sciencedirect.com/science/article/pii/S2211379717304813
collection DOAJ
language English
format Article
sources DOAJ
author Syed Sheraz Ahmad
Wei He
Yong-Sheng Zhang
Jin Tang
Yan Li
Qeemat Gul
Xiang-Qun Zhang
Zhao-Hua Cheng
spellingShingle Syed Sheraz Ahmad
Wei He
Yong-Sheng Zhang
Jin Tang
Yan Li
Qeemat Gul
Xiang-Qun Zhang
Zhao-Hua Cheng
Effect of Ar+ beam sputtering on the magnetic anisotropy of Fe thin films deposited on the MgO(001) substrate
Results in Physics
author_facet Syed Sheraz Ahmad
Wei He
Yong-Sheng Zhang
Jin Tang
Yan Li
Qeemat Gul
Xiang-Qun Zhang
Zhao-Hua Cheng
author_sort Syed Sheraz Ahmad
title Effect of Ar+ beam sputtering on the magnetic anisotropy of Fe thin films deposited on the MgO(001) substrate
title_short Effect of Ar+ beam sputtering on the magnetic anisotropy of Fe thin films deposited on the MgO(001) substrate
title_full Effect of Ar+ beam sputtering on the magnetic anisotropy of Fe thin films deposited on the MgO(001) substrate
title_fullStr Effect of Ar+ beam sputtering on the magnetic anisotropy of Fe thin films deposited on the MgO(001) substrate
title_full_unstemmed Effect of Ar+ beam sputtering on the magnetic anisotropy of Fe thin films deposited on the MgO(001) substrate
title_sort effect of ar+ beam sputtering on the magnetic anisotropy of fe thin films deposited on the mgo(001) substrate
publisher Elsevier
series Results in Physics
issn 2211-3797
publishDate 2017-01-01
description The Fe thin films with different initial thickness were prepared on MgO(001) substrate. Ar+ ion beam having energy of 3 keV was used to sputter the film at incident angle of 80° with respect to the film normal. Low energy electron diffraction (LEED) was employed to study the morphology and crystal quality of the film. Moreover surface magneto-optical Kerr effect (SMOKE) and anisotropic magnetoresistance (AMR) setups were used to investigate the magnetic properties of the Fe film. The values of magnetocrystalline anisotropy K1 and induced in-plane uniaxial magnetic anisotropy (UMA) Ku were derived from torque curves on the base of AMR results and found that the value of Ku was increasing with increasing the sputtering time while the intrinsic magnetocrystalline anisotropy K1 was not affected by sputtering. Similarly it is observed that the value of K1 increases with the thickness. We noted that ion beam sputtering can be used as an effective technique of manipulating the magnetic anisotropy of ultrathin magnetic films.
url http://www.sciencedirect.com/science/article/pii/S2211379717304813
work_keys_str_mv AT syedsherazahmad effectofarbeamsputteringonthemagneticanisotropyoffethinfilmsdepositedonthemgo001substrate
AT weihe effectofarbeamsputteringonthemagneticanisotropyoffethinfilmsdepositedonthemgo001substrate
AT yongshengzhang effectofarbeamsputteringonthemagneticanisotropyoffethinfilmsdepositedonthemgo001substrate
AT jintang effectofarbeamsputteringonthemagneticanisotropyoffethinfilmsdepositedonthemgo001substrate
AT yanli effectofarbeamsputteringonthemagneticanisotropyoffethinfilmsdepositedonthemgo001substrate
AT qeematgul effectofarbeamsputteringonthemagneticanisotropyoffethinfilmsdepositedonthemgo001substrate
AT xiangqunzhang effectofarbeamsputteringonthemagneticanisotropyoffethinfilmsdepositedonthemgo001substrate
AT zhaohuacheng effectofarbeamsputteringonthemagneticanisotropyoffethinfilmsdepositedonthemgo001substrate
_version_ 1724912431298248704