One-step growth of thin film SnS with large grains using MOCVD
Thin film tin sulphide (SnS) films were produced with grain sizes greater than 1 μm using a one-step metal organic chemical vapour deposition process. Tin–doped indium oxide (ITO) was used as the substrate, having a similar work function to molybdenum typically used as the back contact, but with pot...
Main Authors: | Andrew J. Clayton, Cecile M. E. Charbonneau, Wing C. Tsoi, Peter J. Siderfin, Stuart J. C. Irvine |
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Format: | Article |
Language: | English |
Published: |
Taylor & Francis Group
2018-12-01
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Series: | Science and Technology of Advanced Materials |
Subjects: | |
Online Access: | http://dx.doi.org/10.1080/14686996.2018.1428478 |
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