Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application

Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application

Abstract Phase change random access memory (PCRAM) has gained much attention as a candidate for nonvolatile memory application. To develop PCRAM materials with better properties, especially to draw closer to dynamic random access memory (DRAM), the key challenge is to research new high-speed phase c...

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Main Authors: Xin Chen, Yonghui Zheng, Min Zhu, Kun Ren, Yong Wang, Tao Li, Guangyu Liu, Tianqi Guo, Lei Wu, Xianqiang Liu, Yan Cheng, Zhitang Song
Format: Article
Language:English
Published: Nature Publishing Group 2018-05-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-018-25215-z
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spelling doaj-d3ba0352db4c4719a51af35a2ca3119c2020-12-08T05:42:02ZengNature Publishing GroupScientific Reports2045-23222018-05-01811610.1038/s41598-018-25215-zScandium doping brings speed improvement in Sb2Te alloy for phase change random access memory applicationXin Chen0Yonghui Zheng1Min Zhu2Kun Ren3Yong Wang4Tao Li5Guangyu Liu6Tianqi Guo7Lei Wu8Xianqiang Liu9Yan Cheng10Zhitang Song11State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of SciencesState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of SciencesState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of SciencesState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of SciencesState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of SciencesState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of SciencesState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of SciencesState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of SciencesState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of SciencesInstitute of Microstructure and Property of Advanced Materials, Beijing University of TechnologyState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of SciencesState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of SciencesAbstract Phase change random access memory (PCRAM) has gained much attention as a candidate for nonvolatile memory application. To develop PCRAM materials with better properties, especially to draw closer to dynamic random access memory (DRAM), the key challenge is to research new high-speed phase change materials. Here, Scandium (Sc) has been found it is helpful to get high-speed and good stability after doping in Sb2Te alloy. Sc0.1Sb2Te based PCRAM cell can achieve reversible switching by applying even 6 ns voltage pulse experimentally. And, Sc doping not only promotes amorphous stability but also improves the endurance ability comparing with pure Sb2Te alloy. Moreover, according to DFT calculations, strong Sc-Te bonds lead to the rigidity of Sc centered octahedrons, which may act as crystallization precursors in recrystallization process to boost the set speed.https://doi.org/10.1038/s41598-018-25215-z
collection DOAJ
language English
format Article
sources DOAJ
author Xin Chen
Yonghui Zheng
Min Zhu
Kun Ren
Yong Wang
Tao Li
Guangyu Liu
Tianqi Guo
Lei Wu
Xianqiang Liu
Yan Cheng
Zhitang Song
spellingShingle Xin Chen
Yonghui Zheng
Min Zhu
Kun Ren
Yong Wang
Tao Li
Guangyu Liu
Tianqi Guo
Lei Wu
Xianqiang Liu
Yan Cheng
Zhitang Song
Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application
Scientific Reports
author_facet Xin Chen
Yonghui Zheng
Min Zhu
Kun Ren
Yong Wang
Tao Li
Guangyu Liu
Tianqi Guo
Lei Wu
Xianqiang Liu
Yan Cheng
Zhitang Song
author_sort Xin Chen
title Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application
title_short Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application
title_full Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application
title_fullStr Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application
title_full_unstemmed Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application
title_sort scandium doping brings speed improvement in sb2te alloy for phase change random access memory application
publisher Nature Publishing Group
series Scientific Reports
issn 2045-2322
publishDate 2018-05-01
description Abstract Phase change random access memory (PCRAM) has gained much attention as a candidate for nonvolatile memory application. To develop PCRAM materials with better properties, especially to draw closer to dynamic random access memory (DRAM), the key challenge is to research new high-speed phase change materials. Here, Scandium (Sc) has been found it is helpful to get high-speed and good stability after doping in Sb2Te alloy. Sc0.1Sb2Te based PCRAM cell can achieve reversible switching by applying even 6 ns voltage pulse experimentally. And, Sc doping not only promotes amorphous stability but also improves the endurance ability comparing with pure Sb2Te alloy. Moreover, according to DFT calculations, strong Sc-Te bonds lead to the rigidity of Sc centered octahedrons, which may act as crystallization precursors in recrystallization process to boost the set speed.
url https://doi.org/10.1038/s41598-018-25215-z
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