Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application
Abstract Phase change random access memory (PCRAM) has gained much attention as a candidate for nonvolatile memory application. To develop PCRAM materials with better properties, especially to draw closer to dynamic random access memory (DRAM), the key challenge is to research new high-speed phase c...
Main Authors: | Xin Chen, Yonghui Zheng, Min Zhu, Kun Ren, Yong Wang, Tao Li, Guangyu Liu, Tianqi Guo, Lei Wu, Xianqiang Liu, Yan Cheng, Zhitang Song |
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Format: | Article |
Language: | English |
Published: |
Nature Publishing Group
2018-05-01
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Series: | Scientific Reports |
Online Access: | https://doi.org/10.1038/s41598-018-25215-z |
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