Epitaxial growth of β-Ga2O3 thin films on Ga2O3 and Al2O3 substrates by using pulsed laser deposition

Epitaxial growth of β-Ga2O3 thin films on Ga2O3 and Al2O3 substrates by using pulsed laser deposition

In this work, we have successfully grown high quality epitaxial β-Ga2O3 thin films on β-Ga2O3 (100) and Al2O3(0001) substrates using pulsed laser deposition (PLD). By optimizing temperature and oxygen pressure, the best conditions were found to be 650–700∘C and 0.5Pa. To further improve the quality...

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Bibliographic Details
Main Authors: Yuxin An, Liyan Dai, Ying Wu, Biao Wu, Yanfei Zhao, Tong Liu, Hui Hao, Zhengcheng Li, Gang Niu, Jinping Zhang, Zhiyong Quan, Sunan Ding
Format: Article
Language:English
Published: World Scientific Publishing 2019-08-01
Series:Journal of Advanced Dielectrics
Subjects:
Oxide semiconductor
β-Ga2O3 epitaxy
optical transmission spectrum
pulsed laser deposition
crystal growth
Online Access:http://www.worldscientific.com/doi/pdf/10.1142/S2010135X19500322

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http://www.worldscientific.com/doi/pdf/10.1142/S2010135X19500322

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