Introspection Into Reliability Aspects in AlGaN/GaN HEMTs With Gate Geometry Modification
Reliability enhancement of AlGaN / GaN HEMT is a significant thrust area due to rapidly improving material and processing technology. In this paper, a detailed analysis of gate–shaped AlGaN / GaN HEMT with field plate is presented. Although AlGaN / GaN HEMT with field–plate is...
Main Authors: | Sushanta Bordoloi, Ashok Ray, Gaurav Trivedi |
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Format: | Article |
Language: | English |
Published: |
IEEE
2021-01-01
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Series: | IEEE Access |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9481884/ |
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