Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIAD

Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIAD

The nanoscale Si films with the thickness of 2 nm, 5 nm, 10 nm, and 20 nm were deposited by plasma ion assisted deposition (PIAD) on glass substrate, in order to investigate the initial stage and the nucleation and growth mechanism of the Si film. The atomic force microscopy (AFM) was used to invest...

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Main Authors: D. Li, G. L. Liu, Y. Yang, J. H. Wu, Z. R. Huang
Format: Article
Language:English
Published: Hindawi Limited 2013-01-01
Series:Journal of Nanomaterials
Online Access:http://dx.doi.org/10.1155/2013/383867
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spelling doaj-d48db945465547f6ad81449ad9b7b3312020-11-25T00:52:44ZengHindawi LimitedJournal of Nanomaterials1687-41101687-41292013-01-01201310.1155/2013/383867383867Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIADD. Li0G. L. Liu1Y. Yang2J. H. Wu3Z. R. Huang4State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, ChinaState Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, ChinaState Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, ChinaEnergy Materials Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, ChinaState Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, ChinaThe nanoscale Si films with the thickness of 2 nm, 5 nm, 10 nm, and 20 nm were deposited by plasma ion assisted deposition (PIAD) on glass substrate, in order to investigate the initial stage and the nucleation and growth mechanism of the Si film. The atomic force microscopy (AFM) was used to investigate the surface topography of the as-deposited Si film. The initial nucleation and growth process of the film was described. The continuous film had been already formed when the film thickness was 10 nm. The growth of the deposited Si film accorded with the Volmer-Weber growth mode.http://dx.doi.org/10.1155/2013/383867
collection DOAJ
language English
format Article
sources DOAJ
author D. Li
G. L. Liu
Y. Yang
J. H. Wu
Z. R. Huang
spellingShingle D. Li
G. L. Liu
Y. Yang
J. H. Wu
Z. R. Huang
Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIAD
Journal of Nanomaterials
author_facet D. Li
G. L. Liu
Y. Yang
J. H. Wu
Z. R. Huang
author_sort D. Li
title Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIAD
title_short Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIAD
title_full Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIAD
title_fullStr Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIAD
title_full_unstemmed Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIAD
title_sort nucleation and growth mechanism of si amorphous film deposited by piad
publisher Hindawi Limited
series Journal of Nanomaterials
issn 1687-4110
1687-4129
publishDate 2013-01-01
description The nanoscale Si films with the thickness of 2 nm, 5 nm, 10 nm, and 20 nm were deposited by plasma ion assisted deposition (PIAD) on glass substrate, in order to investigate the initial stage and the nucleation and growth mechanism of the Si film. The atomic force microscopy (AFM) was used to investigate the surface topography of the as-deposited Si film. The initial nucleation and growth process of the film was described. The continuous film had been already formed when the film thickness was 10 nm. The growth of the deposited Si film accorded with the Volmer-Weber growth mode.
url http://dx.doi.org/10.1155/2013/383867
work_keys_str_mv AT dli nucleationandgrowthmechanismofsiamorphousfilmdepositedbypiad
AT glliu nucleationandgrowthmechanismofsiamorphousfilmdepositedbypiad
AT yyang nucleationandgrowthmechanismofsiamorphousfilmdepositedbypiad
AT jhwu nucleationandgrowthmechanismofsiamorphousfilmdepositedbypiad
AT zrhuang nucleationandgrowthmechanismofsiamorphousfilmdepositedbypiad
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