Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIAD
The nanoscale Si films with the thickness of 2 nm, 5 nm, 10 nm, and 20 nm were deposited by plasma ion assisted deposition (PIAD) on glass substrate, in order to investigate the initial stage and the nucleation and growth mechanism of the Si film. The atomic force microscopy (AFM) was used to invest...
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2013-01-01
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Series: | Journal of Nanomaterials |
Online Access: | http://dx.doi.org/10.1155/2013/383867 |
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doaj-d48db945465547f6ad81449ad9b7b3312020-11-25T00:52:44ZengHindawi LimitedJournal of Nanomaterials1687-41101687-41292013-01-01201310.1155/2013/383867383867Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIADD. Li0G. L. Liu1Y. Yang2J. H. Wu3Z. R. Huang4State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, ChinaState Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, ChinaState Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, ChinaEnergy Materials Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, ChinaState Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, ChinaThe nanoscale Si films with the thickness of 2 nm, 5 nm, 10 nm, and 20 nm were deposited by plasma ion assisted deposition (PIAD) on glass substrate, in order to investigate the initial stage and the nucleation and growth mechanism of the Si film. The atomic force microscopy (AFM) was used to investigate the surface topography of the as-deposited Si film. The initial nucleation and growth process of the film was described. The continuous film had been already formed when the film thickness was 10 nm. The growth of the deposited Si film accorded with the Volmer-Weber growth mode.http://dx.doi.org/10.1155/2013/383867 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
D. Li G. L. Liu Y. Yang J. H. Wu Z. R. Huang |
spellingShingle |
D. Li G. L. Liu Y. Yang J. H. Wu Z. R. Huang Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIAD Journal of Nanomaterials |
author_facet |
D. Li G. L. Liu Y. Yang J. H. Wu Z. R. Huang |
author_sort |
D. Li |
title |
Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIAD |
title_short |
Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIAD |
title_full |
Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIAD |
title_fullStr |
Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIAD |
title_full_unstemmed |
Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIAD |
title_sort |
nucleation and growth mechanism of si amorphous film deposited by piad |
publisher |
Hindawi Limited |
series |
Journal of Nanomaterials |
issn |
1687-4110 1687-4129 |
publishDate |
2013-01-01 |
description |
The nanoscale Si films with the thickness of 2 nm, 5 nm, 10 nm, and 20 nm were deposited by plasma ion assisted deposition (PIAD) on glass substrate, in order to investigate the initial stage and the nucleation and growth mechanism of the Si film. The atomic force microscopy (AFM) was used to investigate the surface topography of the as-deposited Si film. The initial nucleation and growth process of the film was described. The continuous film had been already formed when the film thickness was 10 nm. The growth of the deposited Si film accorded with the Volmer-Weber growth mode. |
url |
http://dx.doi.org/10.1155/2013/383867 |
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