Detecting halfmetallic electronic structures of spintronic materials in a magnetic field

Abstract Band-gap engineering is one of the fundamental techniques in semiconductor technology and also applicable in next generation spintronics using the spin degree of freedom. To fully utilize the spintronic materials, it is essential to optimize the spin-dependent electronic structures in the o...

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Main Authors: H. Fujiwara, R. Y. Umetsu, F. Kuroda, J. Miyawaki, T. Kashiuchi, K. Nishimoto, K. Nagai, A. Sekiyama, A. Irizawa, Y. Takeda, Y. Saitoh, T. Oguchi, Y. Harada, S. Suga
Format: Article
Language:English
Published: Nature Publishing Group 2021-09-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-021-97992-z
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spelling doaj-d4e51d0747f44c4cbf723064e474b5ea2021-09-26T11:31:47ZengNature Publishing GroupScientific Reports2045-23222021-09-011111910.1038/s41598-021-97992-zDetecting halfmetallic electronic structures of spintronic materials in a magnetic fieldH. Fujiwara0R. Y. Umetsu1F. Kuroda2J. Miyawaki3T. Kashiuchi4K. Nishimoto5K. Nagai6A. Sekiyama7A. Irizawa8Y. Takeda9Y. Saitoh10T. Oguchi11Y. Harada12S. Suga13Division of Materials Physics, Graduate School of Engineering Science, Osaka UniversityInstitute for Materials Research, Tohoku UniversitySANKEN, Osaka UniversityInstitute for Solid State Physics, The University of TokyoDivision of Materials Physics, Graduate School of Engineering Science, Osaka UniversityDivision of Materials Physics, Graduate School of Engineering Science, Osaka UniversityDivision of Materials Physics, Graduate School of Engineering Science, Osaka UniversityDivision of Materials Physics, Graduate School of Engineering Science, Osaka UniversitySANKEN, Osaka UniversityMaterials Sciences Research Center, Japan Atomic Energy Agency (JAEA)Materials Sciences Research Center, Japan Atomic Energy Agency (JAEA)SANKEN, Osaka UniversityInstitute for Solid State Physics, The University of TokyoSANKEN, Osaka UniversityAbstract Band-gap engineering is one of the fundamental techniques in semiconductor technology and also applicable in next generation spintronics using the spin degree of freedom. To fully utilize the spintronic materials, it is essential to optimize the spin-dependent electronic structures in the operando conditions by applying magnetic and/or electric fields. Here we present an advanced spectroscopic technique to probe the spin-polarized electronic structures by using magnetic circular dichroism (MCD) in resonant inelastic soft X-ray scattering (RIXS) under an external magnetic field. Thanks to the spin-selective dipole-allowed transitions in RIXS-MCD, we have successfully demonstrated the direct evidence of the perfectly spin-polarized electronic structures for the prototypical halfmetallic Heusller alloy $$\hbox {Co}_2\hbox {MnSi}$$ Co 2 MnSi . RIXS-MCD is a promising tool to probe the spin-dependent carriers and band-gap induced in the buried magnetic layers in an element specific way under the operando conditions.https://doi.org/10.1038/s41598-021-97992-z
collection DOAJ
language English
format Article
sources DOAJ
author H. Fujiwara
R. Y. Umetsu
F. Kuroda
J. Miyawaki
T. Kashiuchi
K. Nishimoto
K. Nagai
A. Sekiyama
A. Irizawa
Y. Takeda
Y. Saitoh
T. Oguchi
Y. Harada
S. Suga
spellingShingle H. Fujiwara
R. Y. Umetsu
F. Kuroda
J. Miyawaki
T. Kashiuchi
K. Nishimoto
K. Nagai
A. Sekiyama
A. Irizawa
Y. Takeda
Y. Saitoh
T. Oguchi
Y. Harada
S. Suga
Detecting halfmetallic electronic structures of spintronic materials in a magnetic field
Scientific Reports
author_facet H. Fujiwara
R. Y. Umetsu
F. Kuroda
J. Miyawaki
T. Kashiuchi
K. Nishimoto
K. Nagai
A. Sekiyama
A. Irizawa
Y. Takeda
Y. Saitoh
T. Oguchi
Y. Harada
S. Suga
author_sort H. Fujiwara
title Detecting halfmetallic electronic structures of spintronic materials in a magnetic field
title_short Detecting halfmetallic electronic structures of spintronic materials in a magnetic field
title_full Detecting halfmetallic electronic structures of spintronic materials in a magnetic field
title_fullStr Detecting halfmetallic electronic structures of spintronic materials in a magnetic field
title_full_unstemmed Detecting halfmetallic electronic structures of spintronic materials in a magnetic field
title_sort detecting halfmetallic electronic structures of spintronic materials in a magnetic field
publisher Nature Publishing Group
series Scientific Reports
issn 2045-2322
publishDate 2021-09-01
description Abstract Band-gap engineering is one of the fundamental techniques in semiconductor technology and also applicable in next generation spintronics using the spin degree of freedom. To fully utilize the spintronic materials, it is essential to optimize the spin-dependent electronic structures in the operando conditions by applying magnetic and/or electric fields. Here we present an advanced spectroscopic technique to probe the spin-polarized electronic structures by using magnetic circular dichroism (MCD) in resonant inelastic soft X-ray scattering (RIXS) under an external magnetic field. Thanks to the spin-selective dipole-allowed transitions in RIXS-MCD, we have successfully demonstrated the direct evidence of the perfectly spin-polarized electronic structures for the prototypical halfmetallic Heusller alloy $$\hbox {Co}_2\hbox {MnSi}$$ Co 2 MnSi . RIXS-MCD is a promising tool to probe the spin-dependent carriers and band-gap induced in the buried magnetic layers in an element specific way under the operando conditions.
url https://doi.org/10.1038/s41598-021-97992-z
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