Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors

Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors

Vertical integration of amorphous hydrogenated silicon diodes on CMOS readout chips offers several advantages compared to standard CMOS imagers in terms of sensitivity, dynamic range and dark current while at the same time introducing some undesired transient effects leading to image lag. Performanc...

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Bibliographic Details
Main Authors: Christophe Ballif, Clément Miazza, Gregory Choong, Nicolas Wyrsch
Format: Article
Language:English
Published: MDPI AG 2008-08-01
Series:Sensors
Subjects:
Image sensor
monolithic integration
amorphous silicon
Online Access:http://www.mdpi.com/1424-8220/8/8/4656/
Description
Summary:Vertical integration of amorphous hydrogenated silicon diodes on CMOS readout chips offers several advantages compared to standard CMOS imagers in terms of sensitivity, dynamic range and dark current while at the same time introducing some undesired transient effects leading to image lag. Performance of such sensors is here reported and their transient behaviour is analysed and compared to the one of corresponding amorphous silicon test diodes deposited on glass. The measurements are further compared to simulations for a deeper investigation. The long time constant observed in dark or photocurrent decay is found to be rather independent of the density of defects present in the intrinsic layer of the amorphous silicon diode.
ISSN:1424-8220

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