Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors

Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors

Vertical integration of amorphous hydrogenated silicon diodes on CMOS readout chips offers several advantages compared to standard CMOS imagers in terms of sensitivity, dynamic range and dark current while at the same time introducing some undesired transient effects leading to image lag. Performanc...

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Bibliographic Details
Main Authors: Christophe Ballif, Clément Miazza, Gregory Choong, Nicolas Wyrsch
Format: Article
Language:English
Published: MDPI AG 2008-08-01
Series:Sensors
Subjects:
Image sensor
monolithic integration
amorphous silicon
Online Access:http://www.mdpi.com/1424-8220/8/8/4656/
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spelling doaj-d87383c18d954be5b4d1b4b625bfa2492020-11-25T01:03:06ZengMDPI AGSensors1424-82202008-08-018846564668Performance and Transient Behavior of Vertically Integrated Thin-film Silicon SensorsChristophe BallifClément MiazzaGregory ChoongNicolas WyrschVertical integration of amorphous hydrogenated silicon diodes on CMOS readout chips offers several advantages compared to standard CMOS imagers in terms of sensitivity, dynamic range and dark current while at the same time introducing some undesired transient effects leading to image lag. Performance of such sensors is here reported and their transient behaviour is analysed and compared to the one of corresponding amorphous silicon test diodes deposited on glass. The measurements are further compared to simulations for a deeper investigation. The long time constant observed in dark or photocurrent decay is found to be rather independent of the density of defects present in the intrinsic layer of the amorphous silicon diode.http://www.mdpi.com/1424-8220/8/8/4656/Image sensormonolithic integrationamorphous silicon
collection DOAJ
language English
format Article
sources DOAJ
author Christophe Ballif
Clément Miazza
Gregory Choong
Nicolas Wyrsch
spellingShingle Christophe Ballif
Clément Miazza
Gregory Choong
Nicolas Wyrsch
Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors
Sensors
Image sensor
monolithic integration
amorphous silicon
author_facet Christophe Ballif
Clément Miazza
Gregory Choong
Nicolas Wyrsch
author_sort Christophe Ballif
title Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors
title_short Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors
title_full Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors
title_fullStr Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors
title_full_unstemmed Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors
title_sort performance and transient behavior of vertically integrated thin-film silicon sensors
publisher MDPI AG
series Sensors
issn 1424-8220
publishDate 2008-08-01
description Vertical integration of amorphous hydrogenated silicon diodes on CMOS readout chips offers several advantages compared to standard CMOS imagers in terms of sensitivity, dynamic range and dark current while at the same time introducing some undesired transient effects leading to image lag. Performance of such sensors is here reported and their transient behaviour is analysed and compared to the one of corresponding amorphous silicon test diodes deposited on glass. The measurements are further compared to simulations for a deeper investigation. The long time constant observed in dark or photocurrent decay is found to be rather independent of the density of defects present in the intrinsic layer of the amorphous silicon diode.
topic Image sensor
monolithic integration
amorphous silicon
url http://www.mdpi.com/1424-8220/8/8/4656/
work_keys_str_mv AT christopheballif performanceandtransientbehaviorofverticallyintegratedthinfilmsiliconsensors
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AT gregorychoong performanceandtransientbehaviorofverticallyintegratedthinfilmsiliconsensors
AT nicolaswyrsch performanceandtransientbehaviorofverticallyintegratedthinfilmsiliconsensors
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