Characterization of Al-Doped ZnO Transparent Conducting Thin Film Prepared by Off-Axis Magnetron Sputtering
The off-axis sputtering technique was used to deposit Al-doped ZnO (AZO) films on glass substrates at room temperature. For the illustration of the sample position in the sputtering chamber, the value of R/r is introduced. Here, r is the radius of AZO target and R is the distance between the sample...
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2016-01-01
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Series: | Journal of Nanomaterials |
Online Access: | http://dx.doi.org/10.1155/2016/6250640 |
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doaj-d8fffae149bc425d8946563ec30fcbef2020-11-24T23:47:13ZengHindawi LimitedJournal of Nanomaterials1687-41101687-41292016-01-01201610.1155/2016/62506406250640Characterization of Al-Doped ZnO Transparent Conducting Thin Film Prepared by Off-Axis Magnetron SputteringSin-Liang Ou0Feng-Min Lai1Lun-Wei Yuan2Da-Long Cheng3Kuo-Sheng Kao4Department of Materials Science and Engineering, Da-Yeh University, Changhua 515, TaiwanDepartment of Materials Science and Engineering, Da-Yeh University, Changhua 515, TaiwanDepartment of Computer and Communication, SHU-TE University, Kaohsiung 824, TaiwanDepartment of Computer and Communication, SHU-TE University, Kaohsiung 824, TaiwanDepartment of Computer and Communication, SHU-TE University, Kaohsiung 824, TaiwanThe off-axis sputtering technique was used to deposit Al-doped ZnO (AZO) films on glass substrates at room temperature. For the illustration of the sample position in the sputtering chamber, the value of R/r is introduced. Here, r is the radius of AZO target and R is the distance between the sample and the center of substrate holder. A systematic study for the effect of deposition parameters on structural, optical, and electrical properties of AZO films has been investigated in detail. As the sample position of R/r is fixed at 1.8, it is found that the as-deposited AZO film has relatively low resistivity of 2.67 × 10−3 Ω-cm and high transmittance above 80% in the visible region. Additionally, after rapid thermal annealing (RTA) at 600°C with N2 atmosphere, the resistivity of this AZO film can be further reduced to 1.19 × 10−3 Ω-cm. This indicates the AZO films prepared by off-axis magnetron sputtering and treated via the appropriate RTA process have great potential in optoelectronic applications.http://dx.doi.org/10.1155/2016/6250640 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Sin-Liang Ou Feng-Min Lai Lun-Wei Yuan Da-Long Cheng Kuo-Sheng Kao |
spellingShingle |
Sin-Liang Ou Feng-Min Lai Lun-Wei Yuan Da-Long Cheng Kuo-Sheng Kao Characterization of Al-Doped ZnO Transparent Conducting Thin Film Prepared by Off-Axis Magnetron Sputtering Journal of Nanomaterials |
author_facet |
Sin-Liang Ou Feng-Min Lai Lun-Wei Yuan Da-Long Cheng Kuo-Sheng Kao |
author_sort |
Sin-Liang Ou |
title |
Characterization of Al-Doped ZnO Transparent Conducting Thin Film Prepared by Off-Axis Magnetron Sputtering |
title_short |
Characterization of Al-Doped ZnO Transparent Conducting Thin Film Prepared by Off-Axis Magnetron Sputtering |
title_full |
Characterization of Al-Doped ZnO Transparent Conducting Thin Film Prepared by Off-Axis Magnetron Sputtering |
title_fullStr |
Characterization of Al-Doped ZnO Transparent Conducting Thin Film Prepared by Off-Axis Magnetron Sputtering |
title_full_unstemmed |
Characterization of Al-Doped ZnO Transparent Conducting Thin Film Prepared by Off-Axis Magnetron Sputtering |
title_sort |
characterization of al-doped zno transparent conducting thin film prepared by off-axis magnetron sputtering |
publisher |
Hindawi Limited |
series |
Journal of Nanomaterials |
issn |
1687-4110 1687-4129 |
publishDate |
2016-01-01 |
description |
The off-axis sputtering technique was used to deposit Al-doped ZnO (AZO) films on glass substrates at room temperature. For the illustration of the sample position in the sputtering chamber, the value of R/r is introduced. Here, r is the radius of AZO target and R is the distance between the sample and the center of substrate holder. A systematic study for the effect of deposition parameters on structural, optical, and electrical properties of AZO films has been investigated in detail. As the sample position of R/r is fixed at 1.8, it is found that the as-deposited AZO film has relatively low resistivity of 2.67 × 10−3 Ω-cm and high transmittance above 80% in the visible region. Additionally, after rapid thermal annealing (RTA) at 600°C with N2 atmosphere, the resistivity of this AZO film can be further reduced to 1.19 × 10−3 Ω-cm. This indicates the AZO films prepared by off-axis magnetron sputtering and treated via the appropriate RTA process have great potential in optoelectronic applications. |
url |
http://dx.doi.org/10.1155/2016/6250640 |
work_keys_str_mv |
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