Variation of Bulk Etch Rate and some other Etching Parameters with Etching Temperature for Cellulose Nitrate LR-115 Detector
Abstract<br /> In the present work, the variation of the bulk etch rate and some other etching parameters, such as removed active-layer thickness, track growing rate, track etch rate with etching temperature is measured for the solid-state nuclear track detector (SSNTD) LR-115 type 2. The mass...
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College of Education for Pure Sciences
2009-09-01
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doaj-d98316409c684a63bc7cf0fac9d8e2812020-11-25T02:22:03ZaraCollege of Education for Pure Sciencesمجلة التربية والعلم1812-125X2664-25302009-09-01223496010.33899/edusj.2009.5774957749Variation of Bulk Etch Rate and some other Etching Parameters with Etching Temperature for Cellulose Nitrate LR-115 DetectorAli Hussain0Department of Physics, College of Education, University of Mosul, Mosul, IraqAbstract<br /> In the present work, the variation of the bulk etch rate and some other etching parameters, such as removed active-layer thickness, track growing rate, track etch rate with etching temperature is measured for the solid-state nuclear track detector (SSNTD) LR-115 type 2. The mass difference method is used to measure the bulk etch rate and then the removed active-layer thickness during etching with 2.5 N aqueous solution of NaOH as the etchant at etching temperatures 70, 60 and 50°C. Two empirical relationships are derived to calculate the removed active-layer thicknesses and the tracks diameters at any etching time with temperatures as a parameter between (50-70°C), [i.e. h(T,t) and D(T,t)]. The V function (sensitivity), etching efficiency η, critical angle θcrt, and the corresponding activation energies for both the bulk etch rate Vb and the track etch rate Vt are also calculated. The measured and calculated results are in good agreement with those reported in the literature.https://edusj.mosuljournals.com/article_57749_cfb08e309479e27dc079bf2bd4234577.pdfbulk etch rateetching parametersetching temperaturecellulose nitrate lr-115 detector |
collection |
DOAJ |
language |
Arabic |
format |
Article |
sources |
DOAJ |
author |
Ali Hussain |
spellingShingle |
Ali Hussain Variation of Bulk Etch Rate and some other Etching Parameters with Etching Temperature for Cellulose Nitrate LR-115 Detector مجلة التربية والعلم bulk etch rate etching parameters etching temperature cellulose nitrate lr-115 detector |
author_facet |
Ali Hussain |
author_sort |
Ali Hussain |
title |
Variation of Bulk Etch Rate and some other Etching Parameters with Etching Temperature for Cellulose Nitrate LR-115 Detector |
title_short |
Variation of Bulk Etch Rate and some other Etching Parameters with Etching Temperature for Cellulose Nitrate LR-115 Detector |
title_full |
Variation of Bulk Etch Rate and some other Etching Parameters with Etching Temperature for Cellulose Nitrate LR-115 Detector |
title_fullStr |
Variation of Bulk Etch Rate and some other Etching Parameters with Etching Temperature for Cellulose Nitrate LR-115 Detector |
title_full_unstemmed |
Variation of Bulk Etch Rate and some other Etching Parameters with Etching Temperature for Cellulose Nitrate LR-115 Detector |
title_sort |
variation of bulk etch rate and some other etching parameters with etching temperature for cellulose nitrate lr-115 detector |
publisher |
College of Education for Pure Sciences |
series |
مجلة التربية والعلم |
issn |
1812-125X 2664-2530 |
publishDate |
2009-09-01 |
description |
Abstract<br /> In the present work, the variation of the bulk etch rate and some other etching parameters, such as removed active-layer thickness, track growing rate, track etch rate with etching temperature is measured for the solid-state nuclear track detector (SSNTD) LR-115 type 2. The mass difference method is used to measure the bulk etch rate and then the removed active-layer thickness during etching with 2.5 N aqueous solution of NaOH as the etchant at etching temperatures 70, 60 and 50°C. Two empirical relationships are derived to calculate the removed active-layer thicknesses and the tracks diameters at any etching time with temperatures as a parameter between (50-70°C), [i.e. h(T,t) and D(T,t)]. The V function (sensitivity), etching efficiency η, critical angle θcrt, and the corresponding activation energies for both the bulk etch rate Vb and the track etch rate Vt are also calculated. The measured and calculated results are in good agreement with those reported in the literature. |
topic |
bulk etch rate etching parameters etching temperature cellulose nitrate lr-115 detector |
url |
https://edusj.mosuljournals.com/article_57749_cfb08e309479e27dc079bf2bd4234577.pdf |
work_keys_str_mv |
AT alihussain variationofbulketchrateandsomeotheretchingparameterswithetchingtemperatureforcellulosenitratelr115detector |
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