Growth of Lu<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> Based High Melting Temperature Single Crystals by Indirect Heating Method Using Arc Plasma

Growth of Lu<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> Based High Melting Temperature Single Crystals by Indirect Heating Method Using Arc Plasma

A novel single-crystal growth method was developed, using arc plasma and metal melt, for a quick survey of high melting point materials. Single crystals of Yb-doped Lu<sub>2</sub>O<sub>3</sub>, Lu<sub>0.388</sub>Hf<sub>0.612</sub>O<sub>1.806</...

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Main Authors: Kyoung Jin Kim, Kei Kamada, Rikito Murakami, Takahiko Horiai, Shiori Ishikawa, Vladimir V. Kochurikhin, Masao Yoshino, Akihiro Yamaji, Yasuhiro Shoji, Shunsuke Kurosawa, Satoshi Toyoda, Hiroki Sato, Yuui Yokota, Yuji Ohashi, Akira Yoshikawa
Format: Article
Language:English
Published: MDPI AG 2020-07-01
Series:Crystals
Subjects:
single-crystal growth
oxides
core heating method
high melting point materials
scintillators
Online Access:https://www.mdpi.com/2073-4352/10/7/619
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spelling doaj-d991767803e64bb4865f0f55d89fede12020-11-25T03:01:18ZengMDPI AGCrystals2073-43522020-07-011061961910.3390/cryst10070619Growth of Lu<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> Based High Melting Temperature Single Crystals by Indirect Heating Method Using Arc PlasmaKyoung Jin Kim0Kei Kamada1Rikito Murakami2Takahiko Horiai3Shiori Ishikawa4Vladimir V. Kochurikhin5Masao Yoshino6Akihiro Yamaji7Yasuhiro Shoji8Shunsuke Kurosawa9Satoshi Toyoda10Hiroki Sato11Yuui Yokota12Yuji Ohashi13Akira Yoshikawa14New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, JapanNew Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, JapanC&A Corporation, 1-16-23 Ichibancho, Aoba-ku, Sendai 980-0811, JapanInstitute for Material Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, JapanNew Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, JapanC&A Corporation, 1-16-23 Ichibancho, Aoba-ku, Sendai 980-0811, JapanInstitute for Material Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, JapanInstitute for Material Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, JapanC&A Corporation, 1-16-23 Ichibancho, Aoba-ku, Sendai 980-0811, JapanNew Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, JapanNew Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, JapanNew Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, JapanInstitute for Material Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, JapanNew Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, JapanNew Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, JapanA novel single-crystal growth method was developed, using arc plasma and metal melt, for a quick survey of high melting point materials. Single crystals of Yb-doped Lu<sub>2</sub>O<sub>3</sub>, Lu<sub>0.388</sub>Hf<sub>0.612</sub>O<sub>1.806</sub>, and Lu<sub>0.18</sub>Hf<sub>0.82</sub>O<sub>1.91</sub>, with melting points of 2460, 2900, and 2840 °C, respectively, were grown by an indirect heating method using arc plasma. We refer to this indirect heating growth method as the core heating (CH) method. The CH-grown Yb1%-doped Lu<sub>2</sub>O<sub>3</sub> sample showed a full width at half maximum of 286 arcsec in the X-ray rocking curve. This value is better than the 393 arcsec obtained for the crystal grown by the micro-pulling-down (μ-PD) method. The Yb charge transfer state (CTS) emission was observed at 350 nm in the Yb1%-doped Lu<sub>2</sub>O<sub>3</sub> and Lu<sub>0.18</sub>Hf<sub>0.82</sub>O<sub>1.91</sub>. In the case of the μ-PD method, using a rhenium (Re) crucible, absorption due to Re contamination and a resulting reduction in the Yb CTS emission were confirmed. However, contamination did not influence the properties observed in the crystals grown by the CH method.https://www.mdpi.com/2073-4352/10/7/619single-crystal growthoxidescore heating methodhigh melting point materialsscintillators
collection DOAJ
language English
format Article
sources DOAJ
author Kyoung Jin Kim
Kei Kamada
Rikito Murakami
Takahiko Horiai
Shiori Ishikawa
Vladimir V. Kochurikhin
Masao Yoshino
Akihiro Yamaji
Yasuhiro Shoji
Shunsuke Kurosawa
Satoshi Toyoda
Hiroki Sato
Yuui Yokota
Yuji Ohashi
Akira Yoshikawa
spellingShingle Kyoung Jin Kim
Kei Kamada
Rikito Murakami
Takahiko Horiai
Shiori Ishikawa
Vladimir V. Kochurikhin
Masao Yoshino
Akihiro Yamaji
Yasuhiro Shoji
Shunsuke Kurosawa
Satoshi Toyoda
Hiroki Sato
Yuui Yokota
Yuji Ohashi
Akira Yoshikawa
Growth of Lu<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> Based High Melting Temperature Single Crystals by Indirect Heating Method Using Arc Plasma
Crystals
single-crystal growth
oxides
core heating method
high melting point materials
scintillators
author_facet Kyoung Jin Kim
Kei Kamada
Rikito Murakami
Takahiko Horiai
Shiori Ishikawa
Vladimir V. Kochurikhin
Masao Yoshino
Akihiro Yamaji
Yasuhiro Shoji
Shunsuke Kurosawa
Satoshi Toyoda
Hiroki Sato
Yuui Yokota
Yuji Ohashi
Akira Yoshikawa
author_sort Kyoung Jin Kim
title Growth of Lu<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> Based High Melting Temperature Single Crystals by Indirect Heating Method Using Arc Plasma
title_short Growth of Lu<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> Based High Melting Temperature Single Crystals by Indirect Heating Method Using Arc Plasma
title_full Growth of Lu<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> Based High Melting Temperature Single Crystals by Indirect Heating Method Using Arc Plasma
title_fullStr Growth of Lu<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> Based High Melting Temperature Single Crystals by Indirect Heating Method Using Arc Plasma
title_full_unstemmed Growth of Lu<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> Based High Melting Temperature Single Crystals by Indirect Heating Method Using Arc Plasma
title_sort growth of lu<sub>2</sub>o<sub>3</sub> and hfo<sub>2</sub> based high melting temperature single crystals by indirect heating method using arc plasma
publisher MDPI AG
series Crystals
issn 2073-4352
publishDate 2020-07-01
description A novel single-crystal growth method was developed, using arc plasma and metal melt, for a quick survey of high melting point materials. Single crystals of Yb-doped Lu<sub>2</sub>O<sub>3</sub>, Lu<sub>0.388</sub>Hf<sub>0.612</sub>O<sub>1.806</sub>, and Lu<sub>0.18</sub>Hf<sub>0.82</sub>O<sub>1.91</sub>, with melting points of 2460, 2900, and 2840 °C, respectively, were grown by an indirect heating method using arc plasma. We refer to this indirect heating growth method as the core heating (CH) method. The CH-grown Yb1%-doped Lu<sub>2</sub>O<sub>3</sub> sample showed a full width at half maximum of 286 arcsec in the X-ray rocking curve. This value is better than the 393 arcsec obtained for the crystal grown by the micro-pulling-down (μ-PD) method. The Yb charge transfer state (CTS) emission was observed at 350 nm in the Yb1%-doped Lu<sub>2</sub>O<sub>3</sub> and Lu<sub>0.18</sub>Hf<sub>0.82</sub>O<sub>1.91</sub>. In the case of the μ-PD method, using a rhenium (Re) crucible, absorption due to Re contamination and a resulting reduction in the Yb CTS emission were confirmed. However, contamination did not influence the properties observed in the crystals grown by the CH method.
topic single-crystal growth
oxides
core heating method
high melting point materials
scintillators
url https://www.mdpi.com/2073-4352/10/7/619
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