Strain-Modulated Photoelectric Responses from a Flexible α-In2Se3/3R MoS2 Heterojunction

• Main Authors: Weifan Cai, Jingyuan Wang, Yongmin He, Sheng Liu, Qihua Xiong, Zheng Liu, Qing Zhang
• Format: Article
• Language: English
• Published: SpringerOpen 2021-02-01
• Series: Nano-Micro Letters
• Subjects: α-In2Se3/3R MoS2 heterojunction; Flexible; Self-powered photodetector; Strain modulation; Piezoelectric charge
• Online Access: https://doi.org/10.1007/s40820-020-00584-1

Abstract Semiconducting piezoelectric α-In2Se3 and 3R MoS2 have attracted tremendous attention due to their unique electronic properties. Artificial van der Waals (vdWs) heterostructures constructed with α-In2Se3 and 3R MoS2 flakes have shown promising applications in optoelectronics and photocatalysis. Here, we present the first flexible α-In2Se3/3R MoS2 vdWs p-n heterojunction devices for photodetection from the visible to near infrared region. These heterojunction devices exhibit an ultrahigh photoresponsivity of 2.9 × 103 A W−1 and a substantial specific detectivity of 6.2 × 1010 Jones under a compressive strain of − 0.26%. The photocurrent can be increased by 64% under a tensile strain of + 0.35%, due to the heterojunction energy band modulation by piezoelectric polarization charges at the heterojunction interface. This work demonstrates a feasible approach to enhancement of α-In2Se3/3R MoS2 photoelectric response through an appropriate mechanical stimulus.