Physical properties of ZnTe semiconductor thin films prepared by high vacuum resistive system
Zinc telluride (ZnTe) polycrystalline films have been grown on well-cleaned glass substrates by thermal vacuum evaporation technique using 99.99 % pure ZnTe powder as an evaporant. The samples were prepared at different substrate temperatures, rates of evaporation and thicknesses. The X-ray diffract...
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doaj-da120b5fc5dc4db8848e49455a7689402021-09-06T19:20:27ZengSciendoMaterials Science-Poland2083-134X2018-09-0136336436910.1515/msp-2018-0036msp-2018-0036Physical properties of ZnTe semiconductor thin films prepared by high vacuum resistive systemAbbas M.0Shah N. A.1Jehangir K.2Fareed M.3Zaidi A.4Department of Physics, COMSATS Institute of Information Technology, Islamabad4000, PakistanDepartment of Physics, COMSATS Institute of Information Technology, Islamabad4000, PakistanPakistan Council of Renewable Energy Technologies, Islamabad4000, PakistanPakistan Council of Renewable Energy Technologies, Islamabad4000, PakistanPakistan Council of Renewable Energy Technologies, Islamabad4000, PakistanZinc telluride (ZnTe) polycrystalline films have been grown on well-cleaned glass substrates by thermal vacuum evaporation technique using 99.99 % pure ZnTe powder as an evaporant. The samples were prepared at different substrate temperatures, rates of evaporation and thicknesses. The X-ray diffraction was used to study the structure of the films. The structures of the samples were found to be polycrystalline with preferred (1 1 1) orientation. Transmission spectra of all ZnTe films were recorded in the range of 300 nm to 2500 nm. The films were electrically characterized using Hall effect measurements at room temperature. It has been stated that the electrical resistivity, mobility and carrier concentration are strongly influenced by the substrate temperature. From the SEM results, it is clear that the surface of ZnTe is very smooth with occasional large particles on it.https://doi.org/10.1515/msp-2018-0036znte thin filmsheat resistive materialsvacuum evaporationelectrical propertiesoptical and structural characterization |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Abbas M. Shah N. A. Jehangir K. Fareed M. Zaidi A. |
spellingShingle |
Abbas M. Shah N. A. Jehangir K. Fareed M. Zaidi A. Physical properties of ZnTe semiconductor thin films prepared by high vacuum resistive system Materials Science-Poland znte thin films heat resistive materials vacuum evaporation electrical properties optical and structural characterization |
author_facet |
Abbas M. Shah N. A. Jehangir K. Fareed M. Zaidi A. |
author_sort |
Abbas M. |
title |
Physical properties of ZnTe semiconductor thin films prepared by high vacuum resistive system |
title_short |
Physical properties of ZnTe semiconductor thin films prepared by high vacuum resistive system |
title_full |
Physical properties of ZnTe semiconductor thin films prepared by high vacuum resistive system |
title_fullStr |
Physical properties of ZnTe semiconductor thin films prepared by high vacuum resistive system |
title_full_unstemmed |
Physical properties of ZnTe semiconductor thin films prepared by high vacuum resistive system |
title_sort |
physical properties of znte semiconductor thin films prepared by high vacuum resistive system |
publisher |
Sciendo |
series |
Materials Science-Poland |
issn |
2083-134X |
publishDate |
2018-09-01 |
description |
Zinc telluride (ZnTe) polycrystalline films have been grown on well-cleaned glass substrates by thermal vacuum evaporation technique using 99.99 % pure ZnTe powder as an evaporant. The samples were prepared at different substrate temperatures, rates of evaporation and thicknesses. The X-ray diffraction was used to study the structure of the films. The structures of the samples were found to be polycrystalline with preferred (1 1 1) orientation. Transmission spectra of all ZnTe films were recorded in the range of 300 nm to 2500 nm. The films were electrically characterized using Hall effect measurements at room temperature. It has been stated that the electrical resistivity, mobility and carrier concentration are strongly influenced by the substrate temperature. From the SEM results, it is clear that the surface of ZnTe is very smooth with occasional large particles on it. |
topic |
znte thin films heat resistive materials vacuum evaporation electrical properties optical and structural characterization |
url |
https://doi.org/10.1515/msp-2018-0036 |
work_keys_str_mv |
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