Indium Substitution Effect on the Topological Crystalline Insulator Family (Pb1−xSnx)1−yInyTe: Topological and Superconducting Properties

• Main Authors: Ruidan Zhong, John Schneeloch, Qiang Li, Wei Ku, John Tranquada, Genda Gu
• Format: Article
• Language: English
• Published: MDPI AG 2017-02-01
• Series: Crystals
• Subjects: topological crystalline insulator; crystal growth; superconductivity
• Online Access: http://www.mdpi.com/2073-4352/7/2/55

Topological crystalline insulators (TCIs) have been of great interest in the area of condensed matter physics. We investigated the effect of indium substitution on the crystal structure and transport properties in the TCI system (Pb1−xSnx)1−yInyTe. For samples with a tin concentration x ≤ 50 % , the low-temperature resisitivities show a dramatic variation as a function of indium concentration: with up to ∼2% indium doping, the samples show weak-metallic behavior similar to their parent compounds; with ∼6% indium doping, samples have true bulk-insulating resistivity and present evidence for nontrivial topological surface states; with higher indium doping levels, superconductivity was observed, with a transition temperature, T c , positively correlated to the indium concentration and reaching as high as 4.7 K. We address this issue from the view of bulk electronic structure modified by the indium-induced impurity level that pins the Fermi level. The current work summarizes the indium substitution effect on (Pb,Sn)Te, and discusses the topological and superconducting aspects, which can be provide guidance for future studies on this and related systems.