Toward the Ultimate-High-Speed Image Sensor: From 10 ns to 50 ps
The paper summarizes the evolution of the Backside-Illuminated Multi-Collection-Gate (BSI MCG) image sensors from the proposed fundamental structure to the development of a practical ultimate-high-speed silicon image sensor. A test chip of the BSI MCG image sensor achieves the temporal resolution of...
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doaj-db04a86d1eda47bab83de4c7e495292e2020-11-24T22:15:50ZengMDPI AGSensors1424-82202018-07-01188240710.3390/s18082407s18082407Toward the Ultimate-High-Speed Image Sensor: From 10 ns to 50 psAnh Quang Nguyen0Vu Truong Son Dao1Kazuhiro Shimonomura2Kohsei Takehara3Takeharu Goji Etoh4School of Electronics and Telecommunications, Hanoi University of Science and Technology, 1 Dai Co Viet Road, Hanoi 100000, VietnamDepartment of Industrial and Systems Engineering, International University, Vietnam National University HCMC, Quarter 6, Linh Trung Ward, Thu Duc District, Ho Chi Minh City 720400, VietnamSchool of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, JapanSchool of Science and Engineering, Kindai University, 3-4-1 Kowakae, Higashiosaka City, Osaka 577-8502, JapanSchool of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, JapanThe paper summarizes the evolution of the Backside-Illuminated Multi-Collection-Gate (BSI MCG) image sensors from the proposed fundamental structure to the development of a practical ultimate-high-speed silicon image sensor. A test chip of the BSI MCG image sensor achieves the temporal resolution of 10 ns. The authors have derived the expression of the temporal resolution limit of photoelectron conversion layers. For silicon image sensors, the limit is 11.1 ps. By considering the theoretical derivation, a high-speed image sensor designed can achieve the frame rate close to the theoretical limit. However, some of the conditions conflict with performance indices other than the frame rate, such as sensitivity and crosstalk. After adjusting these trade-offs, a simple pixel model of the image sensor is designed and evaluated by simulations. The results reveal that the sensor can achieve a temporal resolution of 50 ps with the existing technology.http://www.mdpi.com/1424-8220/18/8/2407image sensorhigh-speedmulti-collection-gatebackside-illuminatedBSIMCG |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Anh Quang Nguyen Vu Truong Son Dao Kazuhiro Shimonomura Kohsei Takehara Takeharu Goji Etoh |
spellingShingle |
Anh Quang Nguyen Vu Truong Son Dao Kazuhiro Shimonomura Kohsei Takehara Takeharu Goji Etoh Toward the Ultimate-High-Speed Image Sensor: From 10 ns to 50 ps Sensors image sensor high-speed multi-collection-gate backside-illuminated BSI MCG |
author_facet |
Anh Quang Nguyen Vu Truong Son Dao Kazuhiro Shimonomura Kohsei Takehara Takeharu Goji Etoh |
author_sort |
Anh Quang Nguyen |
title |
Toward the Ultimate-High-Speed Image Sensor: From 10 ns to 50 ps |
title_short |
Toward the Ultimate-High-Speed Image Sensor: From 10 ns to 50 ps |
title_full |
Toward the Ultimate-High-Speed Image Sensor: From 10 ns to 50 ps |
title_fullStr |
Toward the Ultimate-High-Speed Image Sensor: From 10 ns to 50 ps |
title_full_unstemmed |
Toward the Ultimate-High-Speed Image Sensor: From 10 ns to 50 ps |
title_sort |
toward the ultimate-high-speed image sensor: from 10 ns to 50 ps |
publisher |
MDPI AG |
series |
Sensors |
issn |
1424-8220 |
publishDate |
2018-07-01 |
description |
The paper summarizes the evolution of the Backside-Illuminated Multi-Collection-Gate (BSI MCG) image sensors from the proposed fundamental structure to the development of a practical ultimate-high-speed silicon image sensor. A test chip of the BSI MCG image sensor achieves the temporal resolution of 10 ns. The authors have derived the expression of the temporal resolution limit of photoelectron conversion layers. For silicon image sensors, the limit is 11.1 ps. By considering the theoretical derivation, a high-speed image sensor designed can achieve the frame rate close to the theoretical limit. However, some of the conditions conflict with performance indices other than the frame rate, such as sensitivity and crosstalk. After adjusting these trade-offs, a simple pixel model of the image sensor is designed and evaluated by simulations. The results reveal that the sensor can achieve a temporal resolution of 50 ps with the existing technology. |
topic |
image sensor high-speed multi-collection-gate backside-illuminated BSI MCG |
url |
http://www.mdpi.com/1424-8220/18/8/2407 |
work_keys_str_mv |
AT anhquangnguyen towardtheultimatehighspeedimagesensorfrom10nsto50ps AT vutruongsondao towardtheultimatehighspeedimagesensorfrom10nsto50ps AT kazuhiroshimonomura towardtheultimatehighspeedimagesensorfrom10nsto50ps AT kohseitakehara towardtheultimatehighspeedimagesensorfrom10nsto50ps AT takeharugojietoh towardtheultimatehighspeedimagesensorfrom10nsto50ps |
_version_ |
1725792784023027712 |