Dual-Tunable Broadband Terahertz Absorber Based on a Hybrid Graphene-Dirac Semimetal Structure

A dual-controlled tunable broadband terahertz absorber based on a hybrid graphene-Dirac semimetal structure is designed and studied. Owing to the flexible tunability of the surface conductivity of graphene and relative permittivity of Dirac semimetal, the absorption bandwidth can be tuned independen...

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Main Authors:	Jiali Wu, Xueguang Yuan, Yangan Zhang, Xin Yan, Xia Zhang
Format:	Article
Language:	English
Published:	MDPI AG 2020-12-01
Series:	Micromachines
Subjects:	absorber graphene Dirac semimetal dual-controlled broadband
Online Access:	https://www.mdpi.com/2072-666X/11/12/1096

id	doaj-db165a062cf74d9399ec9ebfbfbc6754
record_format	Article
spelling	doaj-db165a062cf74d9399ec9ebfbfbc67542020-12-12T00:02:30ZengMDPI AGMicromachines2072-666X2020-12-01111096109610.3390/mi11121096Dual-Tunable Broadband Terahertz Absorber Based on a Hybrid Graphene-Dirac Semimetal StructureJiali Wu0Xueguang Yuan1Yangan Zhang2Xin Yan3Xia Zhang4State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, ChinaState Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, ChinaState Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, ChinaState Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, ChinaState Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, ChinaA dual-controlled tunable broadband terahertz absorber based on a hybrid graphene-Dirac semimetal structure is designed and studied. Owing to the flexible tunability of the surface conductivity of graphene and relative permittivity of Dirac semimetal, the absorption bandwidth can be tuned independently or jointly by shifting the Fermi energy through chemical doping or applying gate voltage. Under normal incidence, the device exhibits a high absorption larger than 90% over a broad range of 4.06–10.7 THz for both TE and TM polarizations. Moreover, the absorber is insensitive to incident angles, yielding a high absorption over 90% at a large incident angle of 60° and 70° for TE and TM modes, respectively. The structure shows great potential in miniaturized ultra-broadband terahertz absorbers and related applications.https://www.mdpi.com/2072-666X/11/12/1096absorbergrapheneDirac semimetaldual-controlledbroadband
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Jiali Wu Xueguang Yuan Yangan Zhang Xin Yan Xia Zhang
spellingShingle	Jiali Wu Xueguang Yuan Yangan Zhang Xin Yan Xia Zhang Dual-Tunable Broadband Terahertz Absorber Based on a Hybrid Graphene-Dirac Semimetal Structure Micromachines absorber graphene Dirac semimetal dual-controlled broadband
author_facet	Jiali Wu Xueguang Yuan Yangan Zhang Xin Yan Xia Zhang
author_sort	Jiali Wu
title	Dual-Tunable Broadband Terahertz Absorber Based on a Hybrid Graphene-Dirac Semimetal Structure
title_short	Dual-Tunable Broadband Terahertz Absorber Based on a Hybrid Graphene-Dirac Semimetal Structure
title_full	Dual-Tunable Broadband Terahertz Absorber Based on a Hybrid Graphene-Dirac Semimetal Structure
title_fullStr	Dual-Tunable Broadband Terahertz Absorber Based on a Hybrid Graphene-Dirac Semimetal Structure
title_full_unstemmed	Dual-Tunable Broadband Terahertz Absorber Based on a Hybrid Graphene-Dirac Semimetal Structure
title_sort	dual-tunable broadband terahertz absorber based on a hybrid graphene-dirac semimetal structure
publisher	MDPI AG
series	Micromachines
issn	2072-666X
publishDate	2020-12-01
description	A dual-controlled tunable broadband terahertz absorber based on a hybrid graphene-Dirac semimetal structure is designed and studied. Owing to the flexible tunability of the surface conductivity of graphene and relative permittivity of Dirac semimetal, the absorption bandwidth can be tuned independently or jointly by shifting the Fermi energy through chemical doping or applying gate voltage. Under normal incidence, the device exhibits a high absorption larger than 90% over a broad range of 4.06–10.7 THz for both TE and TM polarizations. Moreover, the absorber is insensitive to incident angles, yielding a high absorption over 90% at a large incident angle of 60° and 70° for TE and TM modes, respectively. The structure shows great potential in miniaturized ultra-broadband terahertz absorbers and related applications.
topic	absorber graphene Dirac semimetal dual-controlled broadband
url	https://www.mdpi.com/2072-666X/11/12/1096
work_keys_str_mv	AT jialiwu dualtunablebroadbandterahertzabsorberbasedonahybridgraphenediracsemimetalstructure AT xueguangyuan dualtunablebroadbandterahertzabsorberbasedonahybridgraphenediracsemimetalstructure AT yanganzhang dualtunablebroadbandterahertzabsorberbasedonahybridgraphenediracsemimetalstructure AT xinyan dualtunablebroadbandterahertzabsorberbasedonahybridgraphenediracsemimetalstructure AT xiazhang dualtunablebroadbandterahertzabsorberbasedonahybridgraphenediracsemimetalstructure
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Dual-Tunable Broadband Terahertz Absorber Based on a Hybrid Graphene-Dirac Semimetal Structure

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