| Summary: | <p>This work focuses on the preparation and structural characterization of the semiconductor Cu<sub>3</sub>In<sub>5</sub>Se<sub>9</sub>, an important member of ordered vacancy compounds family, belonging to the semiconductor system I<sub>3</sub>-III<sub>5</sub>--VI<sub>9</sub>, where denotes the cation vacancy which is included in the formula to maintain the same number of cations and anions sites. This material was synthesized by the Bridgman-Stockbarger technique, and its structure was refined from powder X-ray diffraction data using the Rietveld method. Cu<sub>3</sub>In<sub>5</sub>Se<sub>9</sub> crystallizes with tetragonal symmetry in the space group P2c (Nº 112), with a = 5.7657(1) Å, c = 11.5353(4) Å, V = 383.47(2) Å<sup>3</sup>. This ternary compound consists of a three-dimensional arrangement of distorted CuSe<sub>4</sub> and InSe<sub>4</sub> tetrahedral connected by common faces. In this structure, each Se atom is coordinated by four cations located at the corners of a slightly distorted tetrahedron, and each cation is tetrahedrally bonded to four anions. Cu<sub>3</sub>In<sub>5</sub>Se<sub>9 </sub>is related to the p-type CuInSe<sub>2</sub> and n-type CuIn<sub>3</sub>Se<sub>5</sub> semiconductor compounds, which are being used in the preparation of high-efficiency solar cells.</p><p> </p><p>DO: <a href="http://dx.doi.org/10.17807/orbital.v13i3.1560">http://dx.doi.org/10.17807/orbital.v13i3.1560</a></p><p class="orbitalabstract"> </p>
|
|---|
