A Review for Compact Model of Thin-Film Transistors (TFTs)
Thin-film transistors (TFTs) have grown into a huge industry due to their broad applications in display, radio-frequency identification tags (RFID), logical calculation, etc. In order to bridge the gap between the fabrication process and the circuit design, compact model plays an indispensable role...
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doaj-dbe58d2873574e9fb3d6f00b59dafd282020-11-24T22:00:10ZengMDPI AGMicromachines2072-666X2018-11-0191159910.3390/mi9110599mi9110599A Review for Compact Model of Thin-Film Transistors (TFTs)Nianduan Lu0Wenfeng Jiang1Quantan Wu2Di Geng3Ling Li4Ming Liu5Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaThin-film transistors (TFTs) have grown into a huge industry due to their broad applications in display, radio-frequency identification tags (RFID), logical calculation, etc. In order to bridge the gap between the fabrication process and the circuit design, compact model plays an indispensable role in the development and application of TFTs. The purpose of this review is to provide a theoretical description of compact models of TFTs with different active layers, such as polysilicon, amorphous silicon, organic and In-Ga-Zn-O (IGZO) semiconductors. Special attention is paid to the surface-potential-based compact models of silicon-based TFTs. With the understanding of both the charge transport characteristics and the requirement of TFTs in organic and IGZO TFTs, we have proposed the surface-potential-based compact models and the parameter extraction techniques. The proposed models can provide accurate circuit-level performance prediction and RFID circuit design, and pass the Gummel symmetry test (GST). Finally; the outlook on the compact models of TFTs is briefly discussed.https://www.mdpi.com/2072-666X/9/11/599thin-film transistors (TFTs)compact modelsurface potential |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Nianduan Lu Wenfeng Jiang Quantan Wu Di Geng Ling Li Ming Liu |
spellingShingle |
Nianduan Lu Wenfeng Jiang Quantan Wu Di Geng Ling Li Ming Liu A Review for Compact Model of Thin-Film Transistors (TFTs) Micromachines thin-film transistors (TFTs) compact model surface potential |
author_facet |
Nianduan Lu Wenfeng Jiang Quantan Wu Di Geng Ling Li Ming Liu |
author_sort |
Nianduan Lu |
title |
A Review for Compact Model of Thin-Film Transistors (TFTs) |
title_short |
A Review for Compact Model of Thin-Film Transistors (TFTs) |
title_full |
A Review for Compact Model of Thin-Film Transistors (TFTs) |
title_fullStr |
A Review for Compact Model of Thin-Film Transistors (TFTs) |
title_full_unstemmed |
A Review for Compact Model of Thin-Film Transistors (TFTs) |
title_sort |
review for compact model of thin-film transistors (tfts) |
publisher |
MDPI AG |
series |
Micromachines |
issn |
2072-666X |
publishDate |
2018-11-01 |
description |
Thin-film transistors (TFTs) have grown into a huge industry due to their broad applications in display, radio-frequency identification tags (RFID), logical calculation, etc. In order to bridge the gap between the fabrication process and the circuit design, compact model plays an indispensable role in the development and application of TFTs. The purpose of this review is to provide a theoretical description of compact models of TFTs with different active layers, such as polysilicon, amorphous silicon, organic and In-Ga-Zn-O (IGZO) semiconductors. Special attention is paid to the surface-potential-based compact models of silicon-based TFTs. With the understanding of both the charge transport characteristics and the requirement of TFTs in organic and IGZO TFTs, we have proposed the surface-potential-based compact models and the parameter extraction techniques. The proposed models can provide accurate circuit-level performance prediction and RFID circuit design, and pass the Gummel symmetry test (GST). Finally; the outlook on the compact models of TFTs is briefly discussed. |
topic |
thin-film transistors (TFTs) compact model surface potential |
url |
https://www.mdpi.com/2072-666X/9/11/599 |
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