Terahertz Emission and Ultrafast Carrier Dynamics of Ar-Ion Implanted Cu(In,Ga)Se<sub>2</sub> Thin Films

Terahertz Emission and Ultrafast Carrier Dynamics of Ar-Ion Implanted Cu(In,Ga)Se<sub>2</sub> Thin Films

We investigated THz emission from Ar-ion-implanted Cu(In,Ga)Se<sub>2</sub> (CIGS) films. THz radiation from the CIGS films increases as the density of implanted Ar ions increases. This is because Ar ions contribute to an increase in the surface surge current density. The effect of Ar-ion...

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Bibliographic Details
Main Authors: Chul Kang, Gyuseok Lee, Woo-Jung Lee, Dae-Hyung Cho, Inhee Maeng, Yong-Duck Chung, Chul-Sik Kee
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Crystals
Subjects:
terahertz
ultrafast
CIGS
carrier dynamics
Online Access:https://www.mdpi.com/2073-4352/11/4/411
Description
Summary:We investigated THz emission from Ar-ion-implanted Cu(In,Ga)Se<sub>2</sub> (CIGS) films. THz radiation from the CIGS films increases as the density of implanted Ar ions increases. This is because Ar ions contribute to an increase in the surface surge current density. The effect of Ar-ion implantation on the carrier dynamics of CIGS films was also investigated using optical pump THz probe spectroscopy. The fitted results imply that implanted Ar ions increase the charge transition of intra-and carrier–carrier scattering lifetimes and decrease the bandgap transition lifetime.
ISSN:2073-4352

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