Low Power Consumption Red Light-Emitting Diodes Based on Inorganic Perovskite Quantum Dots under an Alternating Current Driving Mode

Inorganic perovskites have emerged as a promising candidate for light-emitting devices due to their high stability and tunable band gap. However, the power consumption and brightness have always been an issue for perovskite light-emitting diodes (PeLEDs). Here, we improved the luminescence intensity...

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Main Authors: Jingjing Liu, Zhangbo Lu, Xianju Zhang, Yangyi Zhang, Haiguang Ma, Yang Ji, Xiangxing Xu, Linwei Yu, Jun Xu, Kunji Chen
Format: Article
Language:English
Published: MDPI AG 2018-11-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/8/12/974
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spelling doaj-ded1d1b63a1e4e65a2d7d8952baad02c2020-11-25T02:28:19ZengMDPI AGNanomaterials2079-49912018-11-0181297410.3390/nano8120974nano8120974Low Power Consumption Red Light-Emitting Diodes Based on Inorganic Perovskite Quantum Dots under an Alternating Current Driving ModeJingjing Liu0Zhangbo Lu1Xianju Zhang2Yangyi Zhang3Haiguang Ma4Yang Ji5Xiangxing Xu6Linwei Yu7Jun Xu8Kunji Chen9National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, ChinaJiangsu Key Laboratory of Biofunctional Materials School of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210046, ChinaNational Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, ChinaJiangsu Key Laboratory of Biofunctional Materials School of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210046, ChinaNational Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, ChinaInorganic perovskites have emerged as a promising candidate for light-emitting devices due to their high stability and tunable band gap. However, the power consumption and brightness have always been an issue for perovskite light-emitting diodes (PeLEDs). Here, we improved the luminescence intensity and decreased the current density of the PeLEDs based on CsPbI<sub>3</sub> quantum dots (QDs) and p-type Si substrate through an alternating current (AC) driving mode. For the different driving voltage modes (under a sine pulsed bias or square pulsed bias), a frequency-dependent electroluminescent (EL) behavior was observed. The devices under a square pulsed bias present a stronger EL intensity under the same voltage due to less thermal degradation at the interface. The red PeLEDs under a square pulsed bias driving demonstrate that the EL intensity drop-off phenomenon was further improved, and the integrated EL intensity shows the almost linear increase with the increasing driving voltage above 8.5 V. Additionally, compared to the direct current (DC) driving mode, the red PeLEDs under the AC condition exhibit higher operating stability, which is mainly due to the reducing accumulated charges in the devices. Our work provides an effective approach for obtaining strong brightness, low power consumption, and high stability light-emitting devices, which will exert a profound influence on coupling LEDs with household power supplies directly.https://www.mdpi.com/2079-4991/8/12/974perovskite quantum dotslight emitting diodesalternating current drivinglow power consumptionsilicon
collection DOAJ
language English
format Article
sources DOAJ
author Jingjing Liu
Zhangbo Lu
Xianju Zhang
Yangyi Zhang
Haiguang Ma
Yang Ji
Xiangxing Xu
Linwei Yu
Jun Xu
Kunji Chen
spellingShingle Jingjing Liu
Zhangbo Lu
Xianju Zhang
Yangyi Zhang
Haiguang Ma
Yang Ji
Xiangxing Xu
Linwei Yu
Jun Xu
Kunji Chen
Low Power Consumption Red Light-Emitting Diodes Based on Inorganic Perovskite Quantum Dots under an Alternating Current Driving Mode
Nanomaterials
perovskite quantum dots
light emitting diodes
alternating current driving
low power consumption
silicon
author_facet Jingjing Liu
Zhangbo Lu
Xianju Zhang
Yangyi Zhang
Haiguang Ma
Yang Ji
Xiangxing Xu
Linwei Yu
Jun Xu
Kunji Chen
author_sort Jingjing Liu
title Low Power Consumption Red Light-Emitting Diodes Based on Inorganic Perovskite Quantum Dots under an Alternating Current Driving Mode
title_short Low Power Consumption Red Light-Emitting Diodes Based on Inorganic Perovskite Quantum Dots under an Alternating Current Driving Mode
title_full Low Power Consumption Red Light-Emitting Diodes Based on Inorganic Perovskite Quantum Dots under an Alternating Current Driving Mode
title_fullStr Low Power Consumption Red Light-Emitting Diodes Based on Inorganic Perovskite Quantum Dots under an Alternating Current Driving Mode
title_full_unstemmed Low Power Consumption Red Light-Emitting Diodes Based on Inorganic Perovskite Quantum Dots under an Alternating Current Driving Mode
title_sort low power consumption red light-emitting diodes based on inorganic perovskite quantum dots under an alternating current driving mode
publisher MDPI AG
series Nanomaterials
issn 2079-4991
publishDate 2018-11-01
description Inorganic perovskites have emerged as a promising candidate for light-emitting devices due to their high stability and tunable band gap. However, the power consumption and brightness have always been an issue for perovskite light-emitting diodes (PeLEDs). Here, we improved the luminescence intensity and decreased the current density of the PeLEDs based on CsPbI<sub>3</sub> quantum dots (QDs) and p-type Si substrate through an alternating current (AC) driving mode. For the different driving voltage modes (under a sine pulsed bias or square pulsed bias), a frequency-dependent electroluminescent (EL) behavior was observed. The devices under a square pulsed bias present a stronger EL intensity under the same voltage due to less thermal degradation at the interface. The red PeLEDs under a square pulsed bias driving demonstrate that the EL intensity drop-off phenomenon was further improved, and the integrated EL intensity shows the almost linear increase with the increasing driving voltage above 8.5 V. Additionally, compared to the direct current (DC) driving mode, the red PeLEDs under the AC condition exhibit higher operating stability, which is mainly due to the reducing accumulated charges in the devices. Our work provides an effective approach for obtaining strong brightness, low power consumption, and high stability light-emitting devices, which will exert a profound influence on coupling LEDs with household power supplies directly.
topic perovskite quantum dots
light emitting diodes
alternating current driving
low power consumption
silicon
url https://www.mdpi.com/2079-4991/8/12/974
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