Microwave dielectric properties of BiFeO3 thin film prepared by aqueous chemical solution deposition method

• Main Authors: Ričardas Sobiestianskas, An Hardy, Jūras Banys, Jan D’Haen, Marlies K. Van Bael
• Format: Article
• Language: English
• Published: University of Novi Sad 2009-12-01
• Series: Processing and Application of Ceramics
• Subjects: Multiferroic; Chemical solution deposition; X-ray diffraction; Dielectric permittivity
• Online Access: http://www.tf.uns.ac.rs/publikacije/PAC/pdf/PAC%2006%2001.pdf
• ISSN: 1820-6131

We report high frequency dielectric properties of multiferroic BiFeO3 (BFO) thin film deposited by means of aqueous chemical solution deposition on platinized silicon substrate. The structure analysis of the BFO performed by X-ray diffraction and energy dispersive analysis showed pure, single-phase quality of the thin films. The impedance measurements were performed by vector network analyzer in frequency range 100 MHz to 10 GHz at ambient temperature. The film leakage currents dominate dielectric losses at low frequencies. The dielectric constant of the film is around 40. An internal charged defects acting as energy traps for electrons dominate dielectric losses in the frequency region above 4 GHz.