Microwave dielectric properties of BiFeO3 thin film prepared by aqueous chemical solution deposition method
We report high frequency dielectric properties of multiferroic BiFeO3 (BFO) thin film deposited by means of aqueous chemical solution deposition on platinized silicon substrate. The structure analysis of the BFO performed by X-ray diffraction and energy dispersive analysis showed pure, single-phase...
Main Authors: | , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
University of Novi Sad
2009-12-01
|
Series: | Processing and Application of Ceramics |
Subjects: | |
Online Access: | http://www.tf.uns.ac.rs/publikacije/PAC/pdf/PAC%2006%2001.pdf |
id |
doaj-df7f2b3b77444265883e96b7bd030b36 |
---|---|
record_format |
Article |
spelling |
doaj-df7f2b3b77444265883e96b7bd030b362020-11-24T21:45:03ZengUniversity of Novi SadProcessing and Application of Ceramics1820-61312009-12-0134167170Microwave dielectric properties of BiFeO3 thin film prepared by aqueous chemical solution deposition methodRičardas SobiestianskasAn HardyJūras BanysJan D’HaenMarlies K. Van BaelWe report high frequency dielectric properties of multiferroic BiFeO3 (BFO) thin film deposited by means of aqueous chemical solution deposition on platinized silicon substrate. The structure analysis of the BFO performed by X-ray diffraction and energy dispersive analysis showed pure, single-phase quality of the thin films. The impedance measurements were performed by vector network analyzer in frequency range 100 MHz to 10 GHz at ambient temperature. The film leakage currents dominate dielectric losses at low frequencies. The dielectric constant of the film is around 40. An internal charged defects acting as energy traps for electrons dominate dielectric losses in the frequency region above 4 GHz.http://www.tf.uns.ac.rs/publikacije/PAC/pdf/PAC%2006%2001.pdfMultiferroicChemical solution depositionX-ray diffractionDielectric permittivity |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Ričardas Sobiestianskas An Hardy Jūras Banys Jan D’Haen Marlies K. Van Bael |
spellingShingle |
Ričardas Sobiestianskas An Hardy Jūras Banys Jan D’Haen Marlies K. Van Bael Microwave dielectric properties of BiFeO3 thin film prepared by aqueous chemical solution deposition method Processing and Application of Ceramics Multiferroic Chemical solution deposition X-ray diffraction Dielectric permittivity |
author_facet |
Ričardas Sobiestianskas An Hardy Jūras Banys Jan D’Haen Marlies K. Van Bael |
author_sort |
Ričardas Sobiestianskas |
title |
Microwave dielectric properties of BiFeO3 thin film prepared by aqueous chemical solution deposition method |
title_short |
Microwave dielectric properties of BiFeO3 thin film prepared by aqueous chemical solution deposition method |
title_full |
Microwave dielectric properties of BiFeO3 thin film prepared by aqueous chemical solution deposition method |
title_fullStr |
Microwave dielectric properties of BiFeO3 thin film prepared by aqueous chemical solution deposition method |
title_full_unstemmed |
Microwave dielectric properties of BiFeO3 thin film prepared by aqueous chemical solution deposition method |
title_sort |
microwave dielectric properties of bifeo3 thin film prepared by aqueous chemical solution deposition method |
publisher |
University of Novi Sad |
series |
Processing and Application of Ceramics |
issn |
1820-6131 |
publishDate |
2009-12-01 |
description |
We report high frequency dielectric properties of multiferroic BiFeO3 (BFO) thin film deposited by means of aqueous chemical solution deposition on platinized silicon substrate. The structure analysis of the BFO performed by X-ray diffraction and energy dispersive analysis showed pure, single-phase quality of the thin films. The impedance measurements were performed by vector network analyzer in frequency range 100 MHz to 10 GHz at ambient temperature. The film leakage currents dominate dielectric losses at low frequencies. The dielectric constant of the film is around 40. An internal charged defects acting as energy traps for electrons dominate dielectric losses in the frequency region above 4 GHz. |
topic |
Multiferroic Chemical solution deposition X-ray diffraction Dielectric permittivity |
url |
http://www.tf.uns.ac.rs/publikacije/PAC/pdf/PAC%2006%2001.pdf |
work_keys_str_mv |
AT ricardassobiestianskas microwavedielectricpropertiesofbifeo3thinfilmpreparedbyaqueouschemicalsolutiondepositionmethod AT anhardy microwavedielectricpropertiesofbifeo3thinfilmpreparedbyaqueouschemicalsolutiondepositionmethod AT jurasbanys microwavedielectricpropertiesofbifeo3thinfilmpreparedbyaqueouschemicalsolutiondepositionmethod AT jandhaen microwavedielectricpropertiesofbifeo3thinfilmpreparedbyaqueouschemicalsolutiondepositionmethod AT marlieskvanbael microwavedielectricpropertiesofbifeo3thinfilmpreparedbyaqueouschemicalsolutiondepositionmethod |
_version_ |
1725907030781198336 |