Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

High-quality and crack-free aluminum nitride (AlN) film on sapphire substrate is the foundation for high-efficiency aluminum gallium nitride (AlGaN)-based deep ultraviolet light-emitting diodes (DUV LEDs). We reported the growth of high-quality and crack-free AlN film on sapphire substrate with a na...

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Bibliographic Details
Main Authors: Jie Zhao, Hongpo Hu, Yu Lei, Hui Wan, Liyan Gong, Shengjun Zhou
Format: Article
Language:English
Published: MDPI AG 2019-11-01
Series:Nanomaterials
Subjects:
duv led
nucleation layer
tensile stress
surface morphology
crystal quality
Online Access:https://www.mdpi.com/2079-4991/9/11/1634

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