Mn-doped Ge and Si: A Review of the Experimental Status

Mn-doped Ge and Si: A Review of the Experimental Status

Diluted ferromagnetic semiconductors (FMS) are in the focus of intense research due to their potential applications in spintronics and their striking new physical properties. So far Mn-doped III-V compound semiconductors such as GaMnAs are the most important and best understood ones, but they are fe...

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Main Authors: Heidemarie Schmidt, Shengqiang Zhou
Format: Article
Language:English
Published: MDPI AG 2010-11-01
Series:Materials
Subjects:
diluted ferromagnetic semiconductor
Online Access:http://www.mdpi.com/1996-1944/3/12/5054/
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spelling doaj-e0dba6b3e6704c698f61a16135d417f72020-11-25T00:33:52ZengMDPI AGMaterials1996-19442010-11-013125054508210.3390/ma3125054Mn-doped Ge and Si: A Review of the Experimental StatusHeidemarie SchmidtShengqiang ZhouDiluted ferromagnetic semiconductors (FMS) are in the focus of intense research due to their potential applications in spintronics and their striking new physical properties. So far Mn-doped III-V compound semiconductors such as GaMnAs are the most important and best understood ones, but they are ferromagnetic only at well below room temperature. An interesting alternative could be magnetic semiconductors based on elemental semiconductors, also owing to their compatibility with Si microelectronics. In the last decades, considerable amount of work has been devoted to fabricate Mn-doped Ge and Si FMS. In this article, the structural, magnetic and magneto-transport properties of Mn-doped Ge and Si will be reviewed. http://www.mdpi.com/1996-1944/3/12/5054/diluted ferromagnetic semiconductor
collection DOAJ
language English
format Article
sources DOAJ
author Heidemarie Schmidt
Shengqiang Zhou
spellingShingle Heidemarie Schmidt
Shengqiang Zhou
Mn-doped Ge and Si: A Review of the Experimental Status
Materials
diluted ferromagnetic semiconductor
author_facet Heidemarie Schmidt
Shengqiang Zhou
author_sort Heidemarie Schmidt
title Mn-doped Ge and Si: A Review of the Experimental Status
title_short Mn-doped Ge and Si: A Review of the Experimental Status
title_full Mn-doped Ge and Si: A Review of the Experimental Status
title_fullStr Mn-doped Ge and Si: A Review of the Experimental Status
title_full_unstemmed Mn-doped Ge and Si: A Review of the Experimental Status
title_sort mn-doped ge and si: a review of the experimental status
publisher MDPI AG
series Materials
issn 1996-1944
publishDate 2010-11-01
description Diluted ferromagnetic semiconductors (FMS) are in the focus of intense research due to their potential applications in spintronics and their striking new physical properties. So far Mn-doped III-V compound semiconductors such as GaMnAs are the most important and best understood ones, but they are ferromagnetic only at well below room temperature. An interesting alternative could be magnetic semiconductors based on elemental semiconductors, also owing to their compatibility with Si microelectronics. In the last decades, considerable amount of work has been devoted to fabricate Mn-doped Ge and Si FMS. In this article, the structural, magnetic and magneto-transport properties of Mn-doped Ge and Si will be reviewed.
topic diluted ferromagnetic semiconductor
url http://www.mdpi.com/1996-1944/3/12/5054/
work_keys_str_mv AT heidemarieschmidt mndopedgeandsiareviewoftheexperimentalstatus
AT shengqiangzhou mndopedgeandsiareviewoftheexperimentalstatus
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