Perspective: Optical measurement of feature dimensions and shapes by scatterometry
The use of optical scattering to measure feature shape and dimensions, scatterometry, is now routine during semiconductor manufacturing. Scatterometry iteratively improves an optical model structure using simulations that are compared to experimental data from an ellipsometer. These simulations are...
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2018-05-01
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Online Access: | http://dx.doi.org/10.1063/1.5018310 |
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doaj-e12903099e9c43848e901fa8565569ab2020-11-25T00:13:47ZengAIP Publishing LLCAPL Materials2166-532X2018-05-0165058201058201-1610.1063/1.5018310005896APMPerspective: Optical measurement of feature dimensions and shapes by scatterometryAlain C. Diebold0Andy Antonelli1Nick Keller2SUNY Polytechnic Institute, College of Nanoscale Sciences, 257 Fuller Road, Albany, New York 12203, USANanometrics, Inc., 1550 Buckeye Drive, Milpitas, California 95035, USANanometrics, Inc., 1550 Buckeye Drive, Milpitas, California 95035, USAThe use of optical scattering to measure feature shape and dimensions, scatterometry, is now routine during semiconductor manufacturing. Scatterometry iteratively improves an optical model structure using simulations that are compared to experimental data from an ellipsometer. These simulations are done using the rigorous coupled wave analysis for solving Maxwell’s equations. In this article, we describe the Mueller matrix spectroscopic ellipsometry based scatterometry. Next, the rigorous coupled wave analysis for Maxwell’s equations is presented. Following this, several example measurements are described as they apply to specific process steps in the fabrication of gate-all-around (GAA) transistor structures. First, simulations of measurement sensitivity for the inner spacer etch back step of horizontal GAA transistor processing are described. Next, the simulated metrology sensitivity for sacrificial (dummy) amorphous silicon etch back step of vertical GAA transistor processing is discussed. Finally, we present the application of plasmonically active test structures for improving the sensitivity of the measurement of metal linewidths.http://dx.doi.org/10.1063/1.5018310 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Alain C. Diebold Andy Antonelli Nick Keller |
spellingShingle |
Alain C. Diebold Andy Antonelli Nick Keller Perspective: Optical measurement of feature dimensions and shapes by scatterometry APL Materials |
author_facet |
Alain C. Diebold Andy Antonelli Nick Keller |
author_sort |
Alain C. Diebold |
title |
Perspective: Optical measurement of feature dimensions and shapes by scatterometry |
title_short |
Perspective: Optical measurement of feature dimensions and shapes by scatterometry |
title_full |
Perspective: Optical measurement of feature dimensions and shapes by scatterometry |
title_fullStr |
Perspective: Optical measurement of feature dimensions and shapes by scatterometry |
title_full_unstemmed |
Perspective: Optical measurement of feature dimensions and shapes by scatterometry |
title_sort |
perspective: optical measurement of feature dimensions and shapes by scatterometry |
publisher |
AIP Publishing LLC |
series |
APL Materials |
issn |
2166-532X |
publishDate |
2018-05-01 |
description |
The use of optical scattering to measure feature shape and dimensions, scatterometry, is now routine during semiconductor manufacturing. Scatterometry iteratively improves an optical model structure using simulations that are compared to experimental data from an ellipsometer. These simulations are done using the rigorous coupled wave analysis for solving Maxwell’s equations. In this article, we describe the Mueller matrix spectroscopic ellipsometry based scatterometry. Next, the rigorous coupled wave analysis for Maxwell’s equations is presented. Following this, several example measurements are described as they apply to specific process steps in the fabrication of gate-all-around (GAA) transistor structures. First, simulations of measurement sensitivity for the inner spacer etch back step of horizontal GAA transistor processing are described. Next, the simulated metrology sensitivity for sacrificial (dummy) amorphous silicon etch back step of vertical GAA transistor processing is discussed. Finally, we present the application of plasmonically active test structures for improving the sensitivity of the measurement of metal linewidths. |
url |
http://dx.doi.org/10.1063/1.5018310 |
work_keys_str_mv |
AT alaincdiebold perspectiveopticalmeasurementoffeaturedimensionsandshapesbyscatterometry AT andyantonelli perspectiveopticalmeasurementoffeaturedimensionsandshapesbyscatterometry AT nickkeller perspectiveopticalmeasurementoffeaturedimensionsandshapesbyscatterometry |
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