Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping

A new method of ultrasonic chemical mechanical polishing (CMP) combined with ultrasonic lapping is introduced to improve the machining performance of carbide silicon (SiC). To fulfill the method, an ultrasonic assisted machining apparatus is designed and manufactured. Comparative experiments with an...

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Main Authors:	Yong Hu, Dong Shi, Ye Hu, Hongwei Zhao, Xingdong Sun
Format:	Article
Language:	English
Published:	MDPI AG 2018-10-01
Series:	Materials
Subjects:	single crystal SiC material removal surface generation ultrasonic chemical mechanical polishing ultrasonic lapping
Online Access:	http://www.mdpi.com/1996-1944/11/10/2022

id	doaj-e25fb789540f44bf83445eb74e2b276a
record_format	Article
spelling	doaj-e25fb789540f44bf83445eb74e2b276a2020-11-24T22:09:11ZengMDPI AGMaterials1996-19442018-10-011110202210.3390/ma11102022ma11102022Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic LappingYong Hu0Dong Shi1Ye Hu2Hongwei Zhao3Xingdong Sun4School of Mechanical and Aerospace Engineering, Jilin University, 5988 Renmin Street, Changchun 130025, ChinaSchool of Mechanical and Aerospace Engineering, Jilin University, 5988 Renmin Street, Changchun 130025, ChinaSchool of Mechanical and Aerospace Engineering, Jilin University, 5988 Renmin Street, Changchun 130025, ChinaSchool of Mechanical and Aerospace Engineering, Jilin University, 5988 Renmin Street, Changchun 130025, ChinaSchool of Mechanical and Aerospace Engineering, Jilin University, 5988 Renmin Street, Changchun 130025, ChinaA new method of ultrasonic chemical mechanical polishing (CMP) combined with ultrasonic lapping is introduced to improve the machining performance of carbide silicon (SiC). To fulfill the method, an ultrasonic assisted machining apparatus is designed and manufactured. Comparative experiments with and without ultrasonic assisted vibration are conducted. According to the experimental results, the material removal rate (MRR) and surface generation are investigated. The results show that both ultrasonic lapping and ultrasonic CMP can decrease the two-body abrasion and reduce the peak-to-valley (PV) value of surface roughness, the effect of ultrasonic in lapping can contribute to the higher MRR and better surface quality for the following CMP. The ultrasonic assisted vibration in CMP can promote the chemical reaction, increase the MRR and improve the surface quality. The combined ultrasonic CMP with ultrasonic lapping achieved the highest MRR of 1.057 μm/h and lowest PV value of 0.474 μm. Therefore this sequent ultrasonic assisted processing method can be used to improve the material removal rate and surface roughness for the single crystal SiC wafer.http://www.mdpi.com/1996-1944/11/10/2022single crystal SiCmaterial removalsurface generationultrasonic chemical mechanical polishingultrasonic lapping
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Yong Hu Dong Shi Ye Hu Hongwei Zhao Xingdong Sun
spellingShingle	Yong Hu Dong Shi Ye Hu Hongwei Zhao Xingdong Sun Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping Materials single crystal SiC material removal surface generation ultrasonic chemical mechanical polishing ultrasonic lapping
author_facet	Yong Hu Dong Shi Ye Hu Hongwei Zhao Xingdong Sun
author_sort	Yong Hu
title	Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping
title_short	Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping
title_full	Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping
title_fullStr	Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping
title_full_unstemmed	Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping
title_sort	investigation on the material removal and surface generation of a single crystal sic wafer by ultrasonic chemical mechanical polishing combined with ultrasonic lapping
publisher	MDPI AG
series	Materials
issn	1996-1944
publishDate	2018-10-01
description	A new method of ultrasonic chemical mechanical polishing (CMP) combined with ultrasonic lapping is introduced to improve the machining performance of carbide silicon (SiC). To fulfill the method, an ultrasonic assisted machining apparatus is designed and manufactured. Comparative experiments with and without ultrasonic assisted vibration are conducted. According to the experimental results, the material removal rate (MRR) and surface generation are investigated. The results show that both ultrasonic lapping and ultrasonic CMP can decrease the two-body abrasion and reduce the peak-to-valley (PV) value of surface roughness, the effect of ultrasonic in lapping can contribute to the higher MRR and better surface quality for the following CMP. The ultrasonic assisted vibration in CMP can promote the chemical reaction, increase the MRR and improve the surface quality. The combined ultrasonic CMP with ultrasonic lapping achieved the highest MRR of 1.057 μm/h and lowest PV value of 0.474 μm. Therefore this sequent ultrasonic assisted processing method can be used to improve the material removal rate and surface roughness for the single crystal SiC wafer.
topic	single crystal SiC material removal surface generation ultrasonic chemical mechanical polishing ultrasonic lapping
url	http://www.mdpi.com/1996-1944/11/10/2022
work_keys_str_mv	AT yonghu investigationonthematerialremovalandsurfacegenerationofasinglecrystalsicwaferbyultrasonicchemicalmechanicalpolishingcombinedwithultrasoniclapping AT dongshi investigationonthematerialremovalandsurfacegenerationofasinglecrystalsicwaferbyultrasonicchemicalmechanicalpolishingcombinedwithultrasoniclapping AT yehu investigationonthematerialremovalandsurfacegenerationofasinglecrystalsicwaferbyultrasonicchemicalmechanicalpolishingcombinedwithultrasoniclapping AT hongweizhao investigationonthematerialremovalandsurfacegenerationofasinglecrystalsicwaferbyultrasonicchemicalmechanicalpolishingcombinedwithultrasoniclapping AT xingdongsun investigationonthematerialremovalandsurfacegenerationofasinglecrystalsicwaferbyultrasonicchemicalmechanicalpolishingcombinedwithultrasoniclapping
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Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping

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