Thiophene Disubstituted Benzothiadiazole Derivatives: An Effective Planarization Strategy Toward Deep-Red to Near-Infrared (NIR) Organic Light-Emitting Diodes

• Main Authors: Wentao Xie, Binbin Li, Xinyi Cai, Mengke Li, Zhenyang Qiao, Xiaohui Tang, Kunkun Liu, Cheng Gu, Yuguang Ma, Shi-Jian Su
• Format: Article
• Language: English
• Published: Frontiers Media S.A. 2019-04-01
• Series: Frontiers in Chemistry
• Subjects: organic light-emitting diodes; donor-acceptor chromophores; deep-red to near-infrared (NIR) emission; hybridized local and charge-transfer state (HLCT); hot-exciton
• Online Access: https://www.frontiersin.org/article/10.3389/fchem.2019.00276/full

As one of the three primary colors that are indispensable in full-color displays, the development of red emitters is far behind the blue and green ones. Here, three novel orange-yellow to near-infrared (NIR) emitters based on 5,6-difluorobenzo[c][1,2,5]thiadiazole (BTDF) namely BTDF-TPA, BTDF-TTPA, and BTDF-TtTPA were designed and synthesized. Density functional theory analysis and photophysical characterization reveal that these three materials possess hybridized local and charge-transfer (HLCT) state feature and a feasible reverse intersystem crossing (RISC) from the high-lying triplet state to the singlet state may conduce to an exciton utilization exceeding the limit of 25% of traditional fluorescence materials under electrical excitation. The insertion of thiophene with small steric hindrance as π-bridge between the electron-donating (D) moiety triphenylamine (TPA) and the electron-accepting (A) moiety BTDF not only results in a remarkable 67 nm red-shift of the emission peak but also brings about a large overlap of frontier molecular orbitals to guarantee high radiative transition rate that is of great significance to obtain high photoluminescence quantum yield (PLQY) in the “energy-gap law” dominated long-wavelength emission region. Consequently, an attractive high maximum external quantum efficiency (EQE) of 5.75% was achieved for the doped devices based on these thiophene π-bridged emitters, giving a deep-red emission with small efficiency roll-off. Remarkably, NIR emission could be obtained for the non-doped devices, achieving an excellent maximum EQE of 1.44% and Commission Internationale de l'Éclairage (CIE) coordinates of (0.71, 0.29). These results are among the highest efficiencies in the reported deep-red to NIR fluorescent OLEDs and offer a new π-bridge design strategy in D-π-A and D-π-A-π-D red emitter design.