| Summary: | In this article, we propose a high Schottky barrier source/drain contacts based bilateral gate and assistant Gate controlled bidirectional tunnel field Effect transistor (HSB-BTFET). Different from Schottky barrier (SB) MOSFET which use lower Schottky barrier to produces the thermionic emission current, the proposed HSB -BTFET utilizes higher Schottky barrier to minimize the thermionic emission current and adopts bilateral gate to generate a strong band-to-band tunneling (BTBT) current which works as the conduction mechanism of the forward current. An assistant gate is introduced which efficiently blocks the reverse biased leakage current. Compared to SB MOSFET, HSB-BTFET can realize lower subthreshold swing, much smaller leakage current, higher $\text{I}_{\mathrm{ on}}-{\mathrm{ I}}_{\mathrm{ off}}$ ratio, compared to TFET, it can realize larger forward current. Besides the device symmetry, it's more compatible with MOSFET technology. The function and influence of the Schottky barrier height have been analyzed.
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