Enhanced piezoelectric performance of the ZnO/AlN stacked nanofilm nanogenerator grown by atomic layer deposition

The ZnO-based nanogenerators (NGs) with a precisely controlled interlayer of AlN are fabricated based on atomic layer deposition technique, which was proved to possess an enhanced output signal. The microstructure and composition profiles of the prepared ZnO/AlN stack layer are well characterized fi...

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Main Authors:	Li-Yuan Zhu, Jian-Guo Yang, Kaiping Yuan, Hong-Yan Chen, Tao Wang, Hong-Ping Ma, Wei Huang, Hong-Liang Lu, David Wei Zhang
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2018-12-01
Series:	APL Materials
Online Access:	http://dx.doi.org/10.1063/1.5057889

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spelling	doaj-e695b8f971014ac0bcbf0b7500e1fa1b2020-11-24T22:01:54ZengAIP Publishing LLCAPL Materials2166-532X2018-12-01612121109121109-810.1063/1.5057889001812APMEnhanced piezoelectric performance of the ZnO/AlN stacked nanofilm nanogenerator grown by atomic layer depositionLi-Yuan Zhu0Jian-Guo Yang1Kaiping Yuan2Hong-Yan Chen3Tao Wang4Hong-Ping Ma5Wei Huang6Hong-Liang Lu7David Wei Zhang8State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan University, Shanghai 200433, ChinaThe ZnO-based nanogenerators (NGs) with a precisely controlled interlayer of AlN are fabricated based on atomic layer deposition technique, which was proved to possess an enhanced output signal. The microstructure and composition profiles of the prepared ZnO/AlN stack layer are well characterized first. It was found that the piezoelectric performance of ZnO/AlN stacked nanofilm NGs depends strongly on the thickness of AlN. The maximum piezoelectric open circuit output voltage of 4.0 V and output power of 2.42 µW have been achieved with an optimum 2.3 nm thick AlN interlayer. The piezoelectric output of the NGs also relates with the value and the frequency of the compressive force. The inherent mechanism for the improvement of piezoelectric performance in the stacked structure is well discussed. The findings are expected to provide a simple, inexpensive, and effective approach for enhancing the performance of ZnO-based NGs.http://dx.doi.org/10.1063/1.5057889
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Li-Yuan Zhu Jian-Guo Yang Kaiping Yuan Hong-Yan Chen Tao Wang Hong-Ping Ma Wei Huang Hong-Liang Lu David Wei Zhang
spellingShingle	Li-Yuan Zhu Jian-Guo Yang Kaiping Yuan Hong-Yan Chen Tao Wang Hong-Ping Ma Wei Huang Hong-Liang Lu David Wei Zhang Enhanced piezoelectric performance of the ZnO/AlN stacked nanofilm nanogenerator grown by atomic layer deposition APL Materials
author_facet	Li-Yuan Zhu Jian-Guo Yang Kaiping Yuan Hong-Yan Chen Tao Wang Hong-Ping Ma Wei Huang Hong-Liang Lu David Wei Zhang
author_sort	Li-Yuan Zhu
title	Enhanced piezoelectric performance of the ZnO/AlN stacked nanofilm nanogenerator grown by atomic layer deposition
title_short	Enhanced piezoelectric performance of the ZnO/AlN stacked nanofilm nanogenerator grown by atomic layer deposition
title_full	Enhanced piezoelectric performance of the ZnO/AlN stacked nanofilm nanogenerator grown by atomic layer deposition
title_fullStr	Enhanced piezoelectric performance of the ZnO/AlN stacked nanofilm nanogenerator grown by atomic layer deposition
title_full_unstemmed	Enhanced piezoelectric performance of the ZnO/AlN stacked nanofilm nanogenerator grown by atomic layer deposition
title_sort	enhanced piezoelectric performance of the zno/aln stacked nanofilm nanogenerator grown by atomic layer deposition
publisher	AIP Publishing LLC
series	APL Materials
issn	2166-532X
publishDate	2018-12-01
description	The ZnO-based nanogenerators (NGs) with a precisely controlled interlayer of AlN are fabricated based on atomic layer deposition technique, which was proved to possess an enhanced output signal. The microstructure and composition profiles of the prepared ZnO/AlN stack layer are well characterized first. It was found that the piezoelectric performance of ZnO/AlN stacked nanofilm NGs depends strongly on the thickness of AlN. The maximum piezoelectric open circuit output voltage of 4.0 V and output power of 2.42 µW have been achieved with an optimum 2.3 nm thick AlN interlayer. The piezoelectric output of the NGs also relates with the value and the frequency of the compressive force. The inherent mechanism for the improvement of piezoelectric performance in the stacked structure is well discussed. The findings are expected to provide a simple, inexpensive, and effective approach for enhancing the performance of ZnO-based NGs.
url	http://dx.doi.org/10.1063/1.5057889
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Enhanced piezoelectric performance of the ZnO/AlN stacked nanofilm nanogenerator grown by atomic layer deposition

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