A simple model for vacancy order and disorder in defective half-Heusler systems

Defective half-Heusler systems X1−xYZ with large amounts of intrinsic vacancies, such as Nb1−xCoSb, Ti1−xNiSb and V1−xCoSb, are a group of promising thermoelectric materials. Even with high vacancy concentrations they maintain the average half-Heusler crystal structure. These systems show high elect...

Full description

Bibliographic Details
Main Authors: Nikolaj Roth, Tiejun Zhu, Bo B. Iversen
Format: Article
Language:English
Published: International Union of Crystallography 2020-07-01
Series:IUCrJ
Subjects:
Online Access:http://scripts.iucr.org/cgi-bin/paper?S2052252520005977
id doaj-e6a7c03b85c149b3b12e4440d9c0e668
record_format Article
spelling doaj-e6a7c03b85c149b3b12e4440d9c0e6682020-11-25T03:36:42ZengInternational Union of CrystallographyIUCrJ2052-25252020-07-017467368010.1107/S2052252520005977fc5045A simple model for vacancy order and disorder in defective half-Heusler systemsNikolaj Roth0Tiejun Zhu1Bo B. Iversen2Center for Materials Crystallography, Department of Chemistry, Aarhus University, Aarhus 8000, DenmarkState Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of ChinaCenter for Materials Crystallography, Department of Chemistry, Aarhus University, Aarhus 8000, DenmarkDefective half-Heusler systems X1−xYZ with large amounts of intrinsic vacancies, such as Nb1−xCoSb, Ti1−xNiSb and V1−xCoSb, are a group of promising thermoelectric materials. Even with high vacancy concentrations they maintain the average half-Heusler crystal structure. These systems show high electrical conductivity but low thermal conductivity arising from an ordered YZ substructure, which conducts electrons, while the large amounts of vacancies in the X substructure effectively scatters phonons. Using electron scattering, it was recently observed that, in addition to Bragg diffraction from the average cubic half-Heusler structure, some of these samples show broad diffuse scattering indicating short-range vacancy order, while other samples show sharp additional peaks indicating long-range vacancy ordering. Here it is shown that both the short- and long-range ordering can be explained using the same simple model, which assumes that vacancies in the X substructure avoid each other. The samples showing long-range vacancy order are in agreement with the predicted ground state of the model, while short-range order samples are quenched high-temperature states of the system. A previous study showed that changes in sample stoichiometry affect whether the short- or long-range vacancy structure is obtained, but the present model suggests that thermal treatment of samples should allow controlling the degree of vacancy order, and thereby the thermal conductivity, without changes in composition. This is important as the composition also dictates the amount of electrical carriers. Independent control of electrical carrier concentration and degree of vacancy order should allow further improvements in the thermoelectric properties of these systems.http://scripts.iucr.org/cgi-bin/paper?S2052252520005977defective half-heuslersdiffuse scatteringshort-range ordercorrelated disorderthermoelectricsinorganic materialsmaterials modelingproperties of solids
collection DOAJ
language English
format Article
sources DOAJ
author Nikolaj Roth
Tiejun Zhu
Bo B. Iversen
spellingShingle Nikolaj Roth
Tiejun Zhu
Bo B. Iversen
A simple model for vacancy order and disorder in defective half-Heusler systems
IUCrJ
defective half-heuslers
diffuse scattering
short-range order
correlated disorder
thermoelectrics
inorganic materials
materials modeling
properties of solids
author_facet Nikolaj Roth
Tiejun Zhu
Bo B. Iversen
author_sort Nikolaj Roth
title A simple model for vacancy order and disorder in defective half-Heusler systems
title_short A simple model for vacancy order and disorder in defective half-Heusler systems
title_full A simple model for vacancy order and disorder in defective half-Heusler systems
title_fullStr A simple model for vacancy order and disorder in defective half-Heusler systems
title_full_unstemmed A simple model for vacancy order and disorder in defective half-Heusler systems
title_sort simple model for vacancy order and disorder in defective half-heusler systems
publisher International Union of Crystallography
series IUCrJ
issn 2052-2525
publishDate 2020-07-01
description Defective half-Heusler systems X1−xYZ with large amounts of intrinsic vacancies, such as Nb1−xCoSb, Ti1−xNiSb and V1−xCoSb, are a group of promising thermoelectric materials. Even with high vacancy concentrations they maintain the average half-Heusler crystal structure. These systems show high electrical conductivity but low thermal conductivity arising from an ordered YZ substructure, which conducts electrons, while the large amounts of vacancies in the X substructure effectively scatters phonons. Using electron scattering, it was recently observed that, in addition to Bragg diffraction from the average cubic half-Heusler structure, some of these samples show broad diffuse scattering indicating short-range vacancy order, while other samples show sharp additional peaks indicating long-range vacancy ordering. Here it is shown that both the short- and long-range ordering can be explained using the same simple model, which assumes that vacancies in the X substructure avoid each other. The samples showing long-range vacancy order are in agreement with the predicted ground state of the model, while short-range order samples are quenched high-temperature states of the system. A previous study showed that changes in sample stoichiometry affect whether the short- or long-range vacancy structure is obtained, but the present model suggests that thermal treatment of samples should allow controlling the degree of vacancy order, and thereby the thermal conductivity, without changes in composition. This is important as the composition also dictates the amount of electrical carriers. Independent control of electrical carrier concentration and degree of vacancy order should allow further improvements in the thermoelectric properties of these systems.
topic defective half-heuslers
diffuse scattering
short-range order
correlated disorder
thermoelectrics
inorganic materials
materials modeling
properties of solids
url http://scripts.iucr.org/cgi-bin/paper?S2052252520005977
work_keys_str_mv AT nikolajroth asimplemodelforvacancyorderanddisorderindefectivehalfheuslersystems
AT tiejunzhu asimplemodelforvacancyorderanddisorderindefectivehalfheuslersystems
AT bobiversen asimplemodelforvacancyorderanddisorderindefectivehalfheuslersystems
AT nikolajroth simplemodelforvacancyorderanddisorderindefectivehalfheuslersystems
AT tiejunzhu simplemodelforvacancyorderanddisorderindefectivehalfheuslersystems
AT bobiversen simplemodelforvacancyorderanddisorderindefectivehalfheuslersystems
_version_ 1724548545730576384